IXFH36N60P

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IXFH36N60P is a new type of field-effect transistor (FET) which is categorized as a single MOSFET. It is created for the purpose of high-power, high-frequency, and high-voltage applications. In contrast to other transistors, it has a unique construction to help it achieve increased power capability and efficiency over other technology. This article will first explain the application field, working principle and its main features of IXFH36N60P.

Application field

IXFH36N60P FETs are suitable for power management devices and power converters in various sectors, including automotive and industrial. With a drain current of 36A and a low gate voltage (± 10V), this type of FETs are applicable to high-voltage, high-power and high-efficiency switching applications. Such features ensure a fast and robust design of power control circuit.

Working Principle

IXFH36N60P FETs are constructed with a planar double-diffused MOSFET technology. The construction of this FET allows the electrons to move easily between the source electrode and the drain electrode to the channel. The potential barrier between the source and the drain connection is the gate terminal. This gate terminal has a high input impedance and requires only a small gate voltage to function. Applying voltage gate change in the gate terminal causes a change in the electric field strength can control the current flow from the source to the drain. The FET is normally in an ‘off’ state. In this state, the gate voltage is not selected and the current flow is blocked. When the gate voltage is boosted, the FET goes into an ‘on’ state, allowing current from the source to the drain. By changing the gate voltage, the FET can be used to regulate the current flow.

Features

IXFH36N60P FETs offer many features to make them competitive with other power control transistors. Some of these features include: high power efficiency, low gate charge, low gate resistance, floating channel, improved avalanche and dv/dt capability. These features give the IXFH36N60P FETs an advantage when used in power control circuits. Firstly, the high power efficiency means the FETs can handle higher currents and voltages than other comparable FETs. In addition, the low gate resistance and low gate charge properties contribute to fast switching speed and improved power efficiency. The floating channel feature also ensures a low input capacitance, allowing for higher switching frequency. Finally, the superior avalanche and dv/dt capability give the IXFH36N60P FETs an added margin of safety when performing high-power operations.

In conclusion, IXFH36N60P FETs are suitable for high-voltage, high-power and high-efficiency switching applications, with features such as high power efficiency, low gate charge and low gate resistance. Furthermore, the floating channel feature and improved avalanche and dv/dt capability offer safety and reliability when operating under high-power conditions. As such, IXFH36N60P FETs are a great choice for power control circuits requiring high-voltage, high-power and high-efficiency switching.

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