IXFH24N80P

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IXFH24N80P is a device from Power-MOSFET family developed by IXYS. It is a 800 V insulated gate field-effect transistor (IGFET) with a design that integrates both low drain-to-source on-state resistance and fast switching characteristics. In this article we will analyze the IXFH24N80P application fields and working principles.

IXFH24N80P Application Fields

The IXFH24N80P is primarily designed to be used in applications that require high blocking voltages, low on-state resistance, as well as fast switching speeds. This device provides excellent performance in AC switching applications and can be employed as a small-signal switch and as an inverter in any application where low on-state resistance and fast switching rates are needed. The main application fields of the IXFH24N80P are:

• Power factor correction circuits.
• Motor control circuits.
• DC-DC conversion circuits.
• High voltage rectification and regulation circuits.
• Uninterruptible power supplies.
• High-frequency switching power supplies.
• Battery chargers.
• Telecom equipment.
• Lighting control circuits.

IXFH24N80P Working Principle

The IXFH24N80P is a insulated gate field-effect transistor (IGFET) that operates in the enhancement mode. With reference to the device pin configuration, Pin 1 and 8 are the source pins; Pin 2, 5, and 6 are the drain pins; and Pins 3 and 7 are the gate pins. The drain-source voltage (VDS) is applied between the drain pin and the source pin, and the gate-source voltage (VGS) is applied between the gate pin and the source pin. The device turns on when the gate-source voltage (VGS) is greater than the gate threshold voltage of 6V and the device is in the cut-off state when the gate-source voltage (VGS) is lower than the gate threshold voltage. In the on-state, the Drain-to-Source On-State Resistance (RDS(on)) is typically 0.2 Ohms and the device exhibits excellent switching characteristics.

The IXFH24N80P utilizes a Super-Pi structure which is designed to provide low on-state resistance and fast switching characteristics. The Super-Pi structure basically consists of two vertical MOSFETs which are connected parallel with each other. This structure provides higher current density which in turn reduces the device’s on-state resistance. In addition, the Super-Pi structure also provides a fast switching speed which is ideal for applications like motor control circuits, DC-DC converters, power factor correction circuits, etc.

In conclusion, the IXFH24N80P is an ideal device for applications that require high blocking voltages, low on-state resistance, and fast switching speeds. It is a highly reliable device that can be used in a variety of power electronics applications including power factor correction circuits, motor control circuits, and DC-DC converters. The device also exhibits excellent switching characteristics which make it ideal for high-frequency switching power supplies, battery chargers, telecom equipment, and lighting control circuits.

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