IXFH32N50 Allicdata Electronics
Allicdata Part #:

IXFH32N50-ND

Manufacturer Part#:

IXFH32N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 32A TO-247AD
More Detail: N-Channel 500V 32A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXFH32N50 datasheetIXFH32N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFH32N50 is a high voltage, low-level MOSFET transistor that is suitable for a number of applications. As an N-channel MOSFET, it is one of the most versatile transistors in the market and can be used in many different applications. This particular MOSFET is most suitable for logic-level and low voltage applications such as high speed switching, logic control and power supply regulation. Because of its low on-resistance and high input impedance, the IXFH32N50 is an ideal choice for power conversion or regulating circuits.

The IXFH32N50 is a single N-channel MOSFET, and has a 20Vdss drain-source breakdown voltage, a 0.248Ohm and a guaranteed maximum on-state resistance of 0.4Ohm. It also has a high drain-source breakdown voltage that allows for higher voltage applications. In addition, it also has a fast switching speed so it can cope with high-speed switching. The on-resistance of the transistor is really low, making it great for high-frequency devices.

The working principle of the IXFH32N50 is relatively simple. When the gate signal switches high, the transistor changes its on-resistance state and allows electricity to flow into the drain. This current flow increases the voltage of the drain and increases the on-resistance. The higher the on-resistance, the greater the amount of power can be transferred. When the gate signal switches low, the on-resistance of the transistor is decreased, allowing the gate voltage to fall and decrease the drain voltage. This helps control the current flow, and thus its power consumption.

The IXFH32N50 is basically a three terminal device with a gate, drain and source. The gate is used to control the current flow between the drain and the source. When a gate signal is applied, the MOSFET turns on and the current flow increases. The drain is connected to a voltage source, so it will pull the gate voltage up, allowing higher current flow through the MOSFET. As the voltage of the drain increases, the on-resistance of the transistor increases, and thus the power consumption. The source is connected to a ground, so it helps to keep the gate voltage low and the drain voltage low.

The IXFH32N50 is an important and widely used MOSFET transistor. Its ability to handle high voltages, low on-resistance and its fast switching time make it suitable for a variety of applications. Its popularity comes from its simplicity, efficiency and small size. With so many advantages, it is easy to see why the IXFH32N50 has become a popular choice for applications such as power conversion and logic control.

The specific data is subject to PDF, and the above content is for reference

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