Allicdata Part #: | IXFH10N90-ND |
Manufacturer Part#: |
IXFH10N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 900V 10A TO-247AD |
More Detail: | N-Channel 900V 10A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFH10N90 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFH10N90 is a type of insulated-gate field-effect transistor (IGFET), commonly referred to as a MOSFET (metal–oxide–semiconductor FET). It is a type of single transistors, meaning one switch can be used to control the flow of current. MOSFETs are well-suited for low-voltage/current applications, allowing for efficient control of external circuits and systems without having to rely on large quantities of current.
The IXFH10N90 is typically used in high-power applications, such as power supplies and motor controllers. It is typically used wherever quick switching and efficient power control are required. As it is designed to operate with switch operation frequencies up to 700kHz, it is often employed in switching mode power supplies, where efficiency and fast response times are important.
The IXFH10N90 is a N-channel MOSFET, meaning that it has four terminals, and requires a positive voltage in between the gate and the source terminals (Vgs) to become conductive. This means that the IXFH10N90 has an inherently high input impedance, and so it can be used in low-power applications, such as logic circuits, or with small signal loads that require protection from larger currents. This is due to the high-resistance nature of the N-channel.
In general, the IXFH10N90 has a low gate-source leakage current, allowing it to protect input signals from larger currents. It also features a low RDS(on), which can reduce power losses in the on state. Additionally, its low body diode reverse recovery time enables efficient operation in high-frequency circuits, such as Class D and switch mode power supplies.
The IXFH10N90 is built with a wafer structure, meaning it uses largely intrinsic semiconductor materials such as silicon, germanium, and nitride to create its channel and gate contact regions. This allows the transistor to be used in a variety of applications, including the automotive and computing industries, robotics and radio, and military and aerospace industries.
The IXFH10N90 operates with a voltage range of 45V, and can handle up to 110A of current at a maximum power dissipation of 120W. It also has an on-resistance of only 10mΩ, making it suitable for applications that need fast switching and efficient power control. The Gate threshold voltage (VGS (th)) is a particularly important parameter at -3.3V, ensuring the IXFH10N90 is suitably suitable for low-voltage/current applications.
The IXFH10N90 is built to handle a wide range of temperatures, from -55°C to 150°C. This allows it to be used in a number of hazardous and extreme conditions, from large heating and cooling systems, to outdoor electronic signage.
In conclusion, the IXFH10N90 is an economically viable, high-performance insulated-gate field-effect transistor, that is well-suited for high-power applications requiring quick switching, power control and protection from larger currents. It is designed to remain stable over a broad range of temperatures, making it well-suited for both automotive and industrial applications, as well as the military and aerospace industries. It is also a low cost solution, offering solid performance and reliability while minimizing overall power dissipation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXFH160N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 160A TO-... |
IXFH22N50P | IXYS | -- | 44 | MOSFET N-CH 500V 22A TO-2... |
IXFH26N50P3 | IXYS | -- | 68 | MOSFET N-CH 500V 26A TO-2... |
IXFH26N60P | IXYS | 5.03 $ | 44 | MOSFET N-CH 600V 26A TO-2... |
IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
IXFH42N60P3 | IXYS | 5.54 $ | 30 | MOSFET N-CH 600V 42A TO24... |
IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
IXFH52N50P2 | IXYS | 6.53 $ | 47 | MOSFET N-CH 500V 52A TO24... |
IXFH9N80 | IXYS | 6.97 $ | 3 | MOSFET N-CH 800V 9A TO-24... |
IXFH24N80P | IXYS | -- | 43 | MOSFET N-CH 800V 24A TO-2... |
IXFH21N50 | IXYS | 6.99 $ | 60 | MOSFET N-CH 500V 21A TO-2... |
IXFH36N60P | IXYS | -- | 88 | MOSFET N-CH 600V 36A TO-2... |
IXFH76N07-12 | IXYS | 7.4 $ | 69 | MOSFET N-CH 70V 76A TO-24... |
IXFH6N100Q | IXYS | 7.43 $ | 73 | MOSFET N-CH 1000V 6A TO-2... |
IXFH76N07-11 | IXYS | 7.77 $ | 237 | MOSFET N-CH 70V 76A TO-24... |
IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
IXFH14N100Q2 | IXYS | -- | 58 | MOSFET N-CH 1000V 14A TO-... |
IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH30N85X | IXYS | 7.88 $ | 8 | MOSFET N-CH 850V 30A TO24... |
IXFH180N20X3 | IXYS | 9.26 $ | 15 | 200V/180A ULTRA JUNCTION ... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH150N17T | IXYS | -- | 1000 | MOSFET N-CH 175V 150A TO-... |
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