IXFH20N80Q Allicdata Electronics
Allicdata Part #:

IXFH20N80Q-ND

Manufacturer Part#:

IXFH20N80Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 20A TO-247AD
More Detail: N-Channel 800V 20A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: IXFH20N80Q datasheetIXFH20N80Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFH20N80Q is a Field Effect Transistor (FET) specifically designed for a variety of high-current applications. This power MOSFET has been designed to deliver high performance, reliability and low on-resistance. It is capable of producing superior snubbing, improved robustness, higher output power and extended temperature ranges, making it an ideal choice for applications that require high current switching.

The IXFH20N80Q is a single depletion-mode, N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor). It has a very low threshold voltage (Vth), a rated drain-source breakdown voltage (BV) of 20V, a drain-to-source on-resistance of 0.8 ohms and a maximum drain current of 32A. It is ideally suited to applications where high-current switching is required in automotive, industrial, and power conversion circuit designs.

The IXFH20N80Q can be used for applications such as controlling power to electric motors, HVAC systems, electric vehicle powertrains, high-current load switching and other high-current, high-output power supplies. It is ideal for applications that require the high-power capability of a MOSFET but with a low on-resistance. It is also suitable for convection cooling, as it has superior thermal performance.

The IXFH20N80Q has a low gate threshold voltage, allowing it to be used as an on/off switch in many applications. It has a very low drain-source on-resistance (RDS) which gives it the ability to operate at high-currents. Despite its low value of on-resistance, it is capable of switching effectively at very high frequencies, giving it a wide-range of applications.

The IXFH20N80Q is capable of conducting both AC and DC current, so it can be used in both AC and DC applications. It is also capable of switching very fast, giving it the ability to turn on and off very quickly and reducing the amount of power lost during switching. The IXFH20N80Q has a temperature range of -40°C to 175°C and a dielectric breakdown voltage of 200V. This makes it an ideal choice when high-reliability is required in applications subject to extreme temperature conditions, such as automotive and industrial settings.

The IXFH20N80Q is a highly reliable and efficient semiconductor device. Its low on-resistance and high-current switching capabilities make it a great choice for many applications that require superior performance and reliability. It is an excellent choice for high-power applications and its wide temperature range makes it suitable for use in extreme conditions. The IXFH20N80Q is an ideal choice for applications that require high-frequency switching and high-current capability.

The specific data is subject to PDF, and the above content is for reference

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