Allicdata Part #: | IXFH40N30Q-ND |
Manufacturer Part#: |
IXFH40N30Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 40A TO-247AD |
More Detail: | N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFH40N30Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The IXFH40N30Q is a high-speed, high-voltage field-effect transistor used in a wide range of power applications. Its unique properties make it particularly well-suited for high-power switching and rectification applications. The IXFH40N30Q has a maximum voltage rating of 500V and a maximum current rating of 5.2A. It is available in a variety of packages, including TO-220, TO-247, and TO-263 packages.
Basic Working Principle
The IXFH40N30Q is a MOSFET device, which stands for metal-oxide- semiconductor field-effect transistor. As the name implies, it is a type of transistor that utilizes an insulating layer of metal oxide to create an electric field between the gate and drain or source electrodes. This electric field functions to control the flow of current from the source to the drain terminals. When a voltage is applied to the gate terminal, the field is created, which allows current to pass from the source to the drain. This type of transistor is also known as a “charge-controlled device” or “field-effect transistor” because the gate voltage controls the electric field and, consequently, the current flow.Requirements for Operating the IXFH40N30Q
The IXFH40N30Q can operate up to 500V and 5.2A and it is designed to be used in high-power switching and rectification applications. It requires a minimum gate-source voltage of 10V and a maximum gate-source voltage of 18V. The power dissipation should not exceed 1.2W and the operating temperature should be between -55°C and +150°C. To ensure maximum efficiency, the device must be operated within the rated parameters and should not be overdriven.Application Fields
The IXFH40N30Q can be used in various power switching and rectifying applications. It is particularly well-suited for high-power motor controls, power supply circuits, high-efficiency DC/DC converters, and in high-current rectification and filtering circuits. Due to its high voltage and current ratings, it can also be used in battery-powered applications, portable chargers, and automotive power systems.Conclusion
The IXFH40N30Q is a versatile and robust power device. It can be used in a wide range of applications, from motor controls to battery-powered systems. It is capable of high-voltage and high-current operation and is well-suited for switching and filtering applications. Its unique properties make it an ideal choice for many power applications.The specific data is subject to PDF, and the above content is for reference
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