Allicdata Part #: | IXFH10N100Q-ND |
Manufacturer Part#: |
IXFH10N100Q |
Price: | $ 9.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 10A TO-247AD |
More Detail: | N-Channel 1000V 10A (Tc) 300W (Tc) Through Hole TO... |
DataSheet: | IXFH10N100Q Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 8.53797 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFH10N100Q is a high voltage field effect transistor (FET) that is capable of switching large amounts of power with a relatively low amount of gate drive. It is commonly used in high voltage DC-DC converters and motor control applications, as well as for power semiconductor protection circuits and switching supplies. This type of FET is a part of the MOSFET (metal-oxide-semiconductor field-effect transistor) family. This article will discuss the applications and working principle of the IXFH10N100Q.The IXFH10N100Q is a single transistor that is built to operate at high voltages between -100 and +100V, and is usually used for applications requiring high power and voltage such as motor control, DC-DC converters, switching supplies, and semiconductor protection circuits. It is capable of operating at up to 10 amps, and is able to handle large amounts of power ranging from 0.6 to 2.7V, which allows it to be utilized in higher voltage applications such as power supplies and motor control. The IXFH10N100Q is constructed using a MOSFET technology and is unique in that it has an embedded diode in the drain, which enables the FET to quickly respond to the changes in the input signal without requiring additional external components. The working principle of the IXFH10N100Q is simple, yet effective. The transistor contains a small MOSFET connected between the source and drain terminals. When the gate terminal is supplied with a current, the transistor changes its conductivity between the source and drain, allowing a certain amount of current flow between them. This allows the IXFH10N100Q to control the current flow in the circuit, and can be used for switching and controlling large currents in the circuit.The IXFH10N100Q is capable of very fast switching speeds, and is able to handle high peak currents. It is a reliable and efficient solution for protecting power semiconductors, and can also be used in applications that require high voltage, such as DC-DC converters and motor control applications. The IXFH10N100Q is an ideal choice for applications that require high power and voltage switching. Its combination of high voltage switching, low gate drive requirements and fast switching speeds make it a great choice for power semiconductor protection, motor control and DC-DC converter applications. Overall, the IXFH10N100Q is a great choice for applications requiring high voltage, high power, and fast switching speeds. Its combination of low gate drive requirements, high voltage switching, and fast switching speeds make it an ideal choice for power supplies, motor control, and protection circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXFH160N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 160A TO-... |
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IXFH26N50P3 | IXYS | -- | 68 | MOSFET N-CH 500V 26A TO-2... |
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IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
IXFH42N60P3 | IXYS | 5.54 $ | 30 | MOSFET N-CH 600V 42A TO24... |
IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
IXFH52N50P2 | IXYS | 6.53 $ | 47 | MOSFET N-CH 500V 52A TO24... |
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IXFH76N07-11 | IXYS | 7.77 $ | 237 | MOSFET N-CH 70V 76A TO-24... |
IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
IXFH14N100Q2 | IXYS | -- | 58 | MOSFET N-CH 1000V 14A TO-... |
IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH30N85X | IXYS | 7.88 $ | 8 | MOSFET N-CH 850V 30A TO24... |
IXFH180N20X3 | IXYS | 9.26 $ | 15 | 200V/180A ULTRA JUNCTION ... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH150N17T | IXYS | -- | 1000 | MOSFET N-CH 175V 150A TO-... |
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