IXFH140N10P

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The IXFH140N10P is a n-channel enhancement-mode power MOSFET. This device is designed to handle high power over a wide range of operating temperatures designed to withstand high energy bursts in the avalanche and commutation modes. The IXFH140N10P uses advanced trench technology and design to provide excellent RDS(on) with low gate charge and operation with low gate voltages. This device offers a wide range of working voltage, making it the ideal choice for a wide range of applications.

The IXFH140N10P application field covers a wide range and is perfect for use in switching applications, such as LED lighting, motor and appliance controls, power converters and AC/DC motor control. It is also suitable for automotive applications, such as DC motor and solenoid control, active braking and power management. It can also be used in High-voltage switching, mobile power and Power management, as well as high speed, high side, and low side switching.

The working principle of the IXFH140N10P is based on metal-oxide-semiconductor field effect transistors (MOSFETs). The MOSFET is a voltage-controlled device that uses a metal oxide layer as a gate material to provide insulation between the gate and the source of the device. It can either be turned on or off by switching the gate voltage and by controlling the voltage across the gate-source node. In the off-state, the voltage across the gate is 0V, while in on-state, the gate is biased to a positive value. The IXFH140N10P has an internal drain to source resistance of 140mΩ (RDS(on)), making it ideal for low voltage power switching applications.

The IXFH140N10P is also designed to be highly reliable, with a maximum gate-source voltage (VGS) of 20v, a maximum drain-source voltage (VDS) of 100V, a maximum continuous drain-source current of 10A, and an operating temperature range from -55°C to 150°C. This makes it suitable for applications in harsh environments such as industrial, automotive and outdoor applications.

In conclusion, the IXFH140N10P is perfect for a wide range of applications, including switching applications, automotive applications, high-voltage switching, mobile power and power management, as well as high speed, high side and low side switching. With its low drain-source resistance, high reliability, and wide temperature range, the IXFH140N10P makes an ideal choice for designing high power switching solutions. Its underlying MOSFET technology gives it an edge over other power switch options, providing a reliable, cost-efficient and highly efficient solution for a variety of applications.

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