Allicdata Part #: | IXFH18N100Q3-ND |
Manufacturer Part#: |
IXFH18N100Q3 |
Price: | $ 9.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 18A TO-247 |
More Detail: | N-Channel 1000V 18A (Tc) 830W (Tc) Through Hole TO... |
DataSheet: | IXFH18N100Q3 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 8.68539 |
Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4890pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 660 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFH18N100Q3 has proven to be an efficient and reliable transistor type by providing superior performance in many circuit applications. The IXFH18N100Q3 is a single, three-terminal, N-channel, enhancement mode Field Effect Transistor (FET). It is a reliable solid-state current switch which is used to control current flow between two terminals. It is rated from 10 to 20V and can handle loads up to 2A.
The single FET is a significant device in the integrated circuit, also known as IC, technology and digital technology. It is surprising to note that even this simple device plays a very crucial role in the functioning of these technologies. Single FETs are widely used for performing digital logic operations such as OR, AND and NOT, as well as for voltage and current regulation, power management and switching. This type of FET can also be used in RF circuits, sample-and-hold circuits and voltage multipliers.
The IXFH18N100Q3 works in a very simple manner. It has three terminals, the source, gate and drain. The current flows between the source and drain but can be controlled by the voltage applied to the gate. If there is a negative voltage applied to the gate, the FET acts like an open switch not allowing the current to flow and if the voltage is positive, it acts as a closed switch and allows the current to flow.
The IXFH18N100Q3 is an optimized, self-protected MOSFET for high side load switch applications. It features an advanced trench technology and a proprietary charge-balance structure that ensures more accurate current flow and lower switching threshold voltage. It also has advanced ESD protection, which protects the device from electrostatic discharge. This single FET provides a simple, low cost and efficient solution for power management in automotive and consumer applications.
The IXFH18N100Q3 is versatile in a number of applications. It can be used as a switch in a variety of devices such as motor control, street lights, consumer appliances, cameras, televisions and more. It can also be used for voltage regulation and voltage drop applications, such as in power supplies. In addition, it can be used as an amplifier in audio applications and as an oscillator in clocks.
The main advantages of using IXFH18N100Q3 single FETs are that they are highly reliable, cost-effective and require very low gate and threshold voltages for switching. They are also very efficient, with a low on-resistance and a fast switching speed. IXFH18N100Q3 single FETs are also protected against voltage and current overloads, making them suitable for use in automotive and consumer applications.
In conclusion, IXFH18N100Q3 single FETs are one of the most efficient and reliable transistors available today. Their simple operating principle and versatile applications make them an ideal choice for a wide range of high side load switch applications such as motor control, voltage regulation, voltage drop and power management.
The specific data is subject to PDF, and the above content is for reference
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IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
IXFH42N60P3 | IXYS | 5.54 $ | 30 | MOSFET N-CH 600V 42A TO24... |
IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
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IXFH9N80 | IXYS | 6.97 $ | 3 | MOSFET N-CH 800V 9A TO-24... |
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IXFH21N50 | IXYS | 6.99 $ | 60 | MOSFET N-CH 500V 21A TO-2... |
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IXFH6N100Q | IXYS | 7.43 $ | 73 | MOSFET N-CH 1000V 6A TO-2... |
IXFH76N07-11 | IXYS | 7.77 $ | 237 | MOSFET N-CH 70V 76A TO-24... |
IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
IXFH14N100Q2 | IXYS | -- | 58 | MOSFET N-CH 1000V 14A TO-... |
IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH30N85X | IXYS | 7.88 $ | 8 | MOSFET N-CH 850V 30A TO24... |
IXFH180N20X3 | IXYS | 9.26 $ | 15 | 200V/180A ULTRA JUNCTION ... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH150N17T | IXYS | -- | 1000 | MOSFET N-CH 175V 150A TO-... |
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