IXFH22N60P

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IXFH22N60P is a 600-volt, high-speed, passive, low-distortion N channel hexfet power MOSFETs, applicable for switching and linear applications. The IXFH22N60P is optimized for high-frequency switching with high dv/dt withstand capability and ultra-fast switching speed that let you downsize the heat sink and minimize power dissipation. Moreover, the IXFH22N60P features low on-resistance and low gate charge, making it suitable for high-speed and cost-efficient design.

IXFH22N60P application field

The IXFH22N60P is mainly used in high-power switching applications due to its high current and durability. Common examples of application fields include: mid or high-power switching in lighting, solid state relays, motor drive and other power electronics products. It can also be used in applications such as switch mode power supply and other areas that require high-speed switching, fast turn-on and turn-off, voltage regulation and high frequency modulation.

IXFH22N60P Operating Principle

The IXFH22N60P is equipped with vertical conducting channels, making it perfect for standard vertical MOSFET application. The patented drain-induced barrier lowering (DIBL) technology improves the safety margin and ensures the device can operate stably under the parameters of large to small drain-source voltage and gate voltage. The gate-drain field-effect structure prevents the parasitic current and improve the reliability. Furthermore, the gate-source clamping feature effectively prevents the high reverse current during breakdown, thus eliminating the tendency of device failure.

The application of IXFH22N60P relies on the principles of working as a voltage regulator. It can be used to adjust the output voltage by means of controlling the gate-source voltage and the drain-source voltage. The former is the driving force to turn on the transistor and once it turns on, the drain-source voltage works as the controlling factor which changes its output voltage. Therefore, by changing the voltage at the gate-source and drain-source, the output voltage can be controlled. The other main principle lies in the ability of IXFH22N60P to endure high voltage and fastload. Thanks to its vertical channel structure and its ability to resist high dv/dt, it is suitable for a wide range of applications.

Conclusion

In summary, IXFH22N60P has excellent characteristics that make it suitable for high speed power transistor applications. Its high current and voltage, low distortion, low on-resistance, fast switching speed and excellent reliability make it an ideal choice when building high power switch systems. The IXFH22N60P is widely used in many fields such as lighting, solid state relays and motor drives, and its working principles revolve around the concept of controlling the output voltage.

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