IXFH23N80Q Allicdata Electronics
Allicdata Part #:

IXFH23N80Q-ND

Manufacturer Part#:

IXFH23N80Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 23A TO-247
More Detail: N-Channel 800V 23A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFH23N80Q datasheetIXFH23N80Q Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH23N80Q is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a maximum drain-source voltage of 800V. It is mainly used in power supply applications in order to regulate the current flow in a circuit. The MOSFET is also commonly used as a switch in many electronic devices. The IXFH23N80Q is a single MOSFET, meaning that it consists of a single transistor. A single MOSFET works on the principle of capacitance. The capacitance is used to control the flow of electrons between the source and drain terminals.

In the IXFH23N80Q, the gate terminal controls the flow of electrons from the source to the drain. When the gate voltage is increased, it creates an electric field that attracts the electrons from the source and allows them to flow freely to the drain. On the other hand, when the gate voltage is decreased, the electric field is lowered and the electrons from the source cannot reach the drain. Thus, the IXFH23N80Q can be used to control the flow of current in the circuit and can be used as a switch to turn a device on or off.

The IXFH23N80Q is mainly used in the power electronics field. It is mainly used in high voltage applications as it has a maximum drain-source voltage of 800V. It is also used in switching power supplies where it is used to regulate the current flow in the circuit. The IXFH23N80Q is also used in motor drives and battery chargers to control the current flow. Moreover, it can also be used in the automotive industry for controlling the flow of current in the circuit and for controlling the motor drives.

In conclusion, the IXFH23N80Q is an N-channel MOSFET that is mainly used in high voltage applications. It works on the principle of capacitance and the gate terminal is used to control the flow of electrons from the source to the drain. The IXFH23N80Q is mainly used in the power electronics field, such as in switching power supplies, motor drives and battery chargers, and in the automotive industry.

The specific data is subject to PDF, and the above content is for reference

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