IXFH26N50P Allicdata Electronics
Allicdata Part #:

IXFH26N50P-ND

Manufacturer Part#:

IXFH26N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 26A TO-247
More Detail: N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-...
DataSheet: IXFH26N50P datasheetIXFH26N50P Datasheet/PDF
Quantity: 1318
Stock 1318Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH26N50P is a simple power MOSFET device used to control larger currents and/or voltages than can be managed by other comparable devices such as BJTs. It is a single N-Channel MOSFET that is designed to handle high power applications such as motor drivers, load switches, low voltage power supplies and other power related systems; the IXFH26N50P is designed for high performance applications.

The IXFH26N50P is an enhancement-mode, N-Channel Field-Effect Transistor (FET); it is an insulated-gate semiconductor which contains no resistors. To understand the principles behind its operation we must first take a look at how FETs contrast with BJTs. FETs essentially operate like as a voltage-controlled switch, meaning the output current is set by the voltage applied to the gate, whereas BJTs are essentially current-controlled switches, where the output is determined by the current applied to the base.

The IXFH26N50P has a superior capability to withstand high voltages, with and enhanced temperature range tolerance when compared to BJTs. In addition, since the device is based on the MOSFET 90 voltage-controlled switch architecture, it offers superior immunity to parasite capacitance, meaning it can switch large loads with near-zero input overshoot.

When used in a p-channel configuration, the IXFH26N50P is capable of integrating logic level switching control from devices such as a microprocessor. And because the FET is unipolar, the effective gate-source capacitance is very low, allowing the IXFH26N50P to switch loads in a fraction of the time it takes for comparable BJT devices.

In practical applications the IXFH26N50P is well-suited for motor control and variable voltage power supplies, being able to switch at frequencies of up to two MHz with minimum power losses. Other applications, such as load switching, dc/dc converters and full/half bridge control are also suitable.

The IXFH26N50P is a miniature, single N-Channel MOSFET which incorporates many features of the standard MOSFET design. It comes in an industry-standard TO-220 case with a weight of just 7.5 grams and is relatively inexpensive to manufacture. This, coupled with its high-performance characteristics, makes the IXFH26N50P an ideal choice for many high-power applications.

The specific data is subject to PDF, and the above content is for reference

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