IXFH28N60P3 Allicdata Electronics
Allicdata Part #:

IXFH28N60P3-ND

Manufacturer Part#:

IXFH28N60P3

Price: $ 3.66
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 28A TO247
More Detail: N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-...
DataSheet: IXFH28N60P3 datasheetIXFH28N60P3 Datasheet/PDF
Quantity: 1000
30 +: $ 3.29280
Stock 1000Can Ship Immediately
$ 3.66
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 695W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3560pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 260 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFH28N60P3 is a power MOSFET, which is a type of field-effect transistor (FET) typically used for switching and amplification, as well as in a range of power management applications. It aligns itself under the subcategory of transistors, field-effect transistors, and single MOSFETs. This article will discuss the breakdown and application field of the IXFH28N60P3, as well as its working principle.

IXFH28N60P3 Breakdown and Application Field

The IXFH28N60P3 is a fast superjunction MOSFET developed by Infineon Technologies AG. This MOSFET has a particularly low on-resistance which makes it suitable for applications where fast switching and low conduction losses are needed. Some of the applications where it can be used are boosts and inverters, DC-DC converters, synchronous buck converters, and 1-3 phase motor drivers.

The IXFH28N60P3 MOSFET has a breakdown voltage of 900V, with a maximum drain-source voltage of 600V. It is capable of handling up to 28A of continuous drain current and has a maximum drain to source on-resistance of 20mO. The maximum junction temperature of the IXFH28N60P3 is 175°C, along with a total gate charge of 80nC. These features, along with its ability to handle power switching and amplification, make it a viable option for a variety of applications.

Working Principle of the IXFH28N60P3

The IXFH28N60P3 is a power MOSFET and therefore uses the principle of voltage control to switch on and off. Power MOSFETs have the unique ability to be controllable by the voltage being applied to the gate. This is known as voltage triggering. When the voltage applied to the gate is above a given threshold, the MOSFET is considered to be “on”. This allows for current to flow from the source to the drain, and vice versa. When the voltage applied to the gate is below the threshold voltage, the MOSFET is “off” and no current can flow from the source to the drain.

The IXFH28N60P3 also has an additional feature that allows for voltage modulation. This is known as Linear Transfer Control (LTC). This is done by applying a gate voltage that falls between the off and on voltages of the device. This allows for the IXFH28N60P3 to “tune” the conduction between the source and drain. This can be used to tailor the output of the device to specific needs. For example, if a certain amount of current needs to be outputted, then the LTC can be used to adjust the output current.

The IXFH28N60P3 is an example of a power MOSFET that is capable of switching power efficiently, while also providing an easy way to modulate the output of the device. This makes it a great option for applications where efficiency, power, and control are needed.

The specific data is subject to PDF, and the above content is for reference

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