IXFH30N50

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The IXFH30N50 from Infineon Technologies is part of the CoolMOS series. It is an N-channel enhancement mode power field effect transistor (FET). It is intended for use in medium voltage and medium power switch mode applications such as switched-mode power supplies (SMPS), solar energy inverters, DC/DC converters, lamp ballasts and AC motor control.

A field effect transistor is a type of semiconductor device that controls current through a channel created between two electrodes, the source and drain. A voltage applied between the gate and source electrodes modulates this current channel. Field effect transistors differ from their bipolar cousins in that the current flow is mainly due to majority carriers rather than the drifting of charge carriers under the action of an electric field.

The IXFH30N50 devices can be called “enhancement mode” or “active mode” because the transistor must be “activated” by applying an appropriate voltage to the gate. When the gate-source voltage (VGS) is higher than the threshold voltage (Vth) of the FET (typically between 2 V and 4 V), a conducting channel is formed between the source and drain terminals and the current starts to flow. The channel created by the transistor is between the source and drain regions; therefore, the voltage applied between the drain and source terminals (VDS) must be in the range of the device’s breakdown voltage (VBR), typically between 30 V and 50 V. When the gate voltage is below the specified threshold voltage, the channel is cut off and no current flows between the source and drain.

The IXFH30N50 has an improved RDS(on) when compared to previous generations of devices. This means that the device can operate at higher temperatures and has improved efficiency, both in terms of lower power dissipation and higher power output. It also features low equivalent on-resistance (RDS(on)) for lower conduction losses. Additionally, it has a short-circuit hard limiting characteristic which means that current will be limited to a safe value if a short-circuit is applied to the drain.

The IXFH30N50 is optimized for applications such as SMPS, solar inverters, DC/DC converters, lighting ballasts and AC motor control. It can operate over a wide frequency range and is also suitable for soft start and resonant switching applications. It is available in a variety of package types, is optimized for low gate charge, low output capacitance, and low on-state resistance, and is lead and halogen-free.

In summary, the IXFH30N50 is an N-channel enhancement mode power MOSFET and is intended for use in medium voltage, medium power switch mode applications. It is designed to minimize conduction losses, optimize switching losses, and increase system efficiency. Its features include a low gate charge, low output capacitance, low on-state resistance, and is lead and halogen-free. Furthermore, it has a short-circuit hard limiting characteristic which ensures a safe operating environment.

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