IXFH36N55Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction:

The IXFH36N55Q is a depletion-mode, vertical double-diffused MOSFET (VDMOSFET) that has been developed by Infineon Technologies from Germany. This vertical double-diffused MOSFET, also known as a Double Diffused Junction Field-Effect Transistor, has been designed for use in industrial, automotive, and consumer electronics applications. It is capable of providing high current and power switching in a compact form factor. The IXFH36N55Q has a drain-to-source breakdown voltage of 36V, a low on-resistance of 0.018Ω, and a maximum gate-to-source voltage of 10V.

Application Field:

The IXFH36N55Q is designed primarily for use in applications where high current and power switching is required. It is often used in the automotive, industrial, and consumer electronics industries to control motors and solenoids. In the automotive industry, it can be used to provide motor control for headlights, wipers, and door openers. The IXFH36N55Q is also ideal for controlling solenoids, pumps and valves, or any other device that requires high current or power switching. Additionally, it can be used in switching power supply applications and other power control applications.

Working Principle:

The IXFH36N55Q is a VDMOSFET, which is a type of MOSFET. It is a transistor that uses metal oxide semiconductor material as the gate instead of a conventional gate material. The metal oxide semiconductor material consists of one or more layers of metal and silicon dioxide. As an input voltage is applied to the gate, it will create an electric field which will control the flow of current through the transistor. The current flow is controlled by the resistance between the source and the drain. The resistance between the source and the drain is referred to as the on-resistance.

The IXFH36N55Q has a low on-resistance of 0.018Ω and a max gate-to-source voltage of 10V. This allows it to switch quickly and efficiently with minimal power loss. The drain-to-source breakdown voltage of the IXFH36N55Q is 36V, which makes it well suited for applications that require high voltage switching. In addition, the IXFH36N55Q can be operated within a temperature range of -55°C to 175°C. This makes it suitable for use in a variety of temperature ranges.

The IXFH36N55Q is also designed with features such as drop-in compatibility, low gate charge, and low gate leakage current. All of these features work together to make the IXFH36N55Q an ideal choice for high current and power switching applications. It is also designed to be resistant to transient noise and Electro-Magnetic Interference (EMI) so that it can be used in a variety of applications.

Conclusion:

The IXFH36N55Q is a depletion-mode, vertical double-diffused MOSFET (VDMOSFET) that is designed for use in industrial, automotive, and consumer electronics applications. It has a low on-resistance of 0.018Ω, a max gate-to-source voltage of 10V, and a drain-to-source breakdown voltage of 36V. It features features such as drop-in compatibility, low gate charge, and low gate leakage current, and it is also designed to be resistant to transient noise and EMI. As a result, it is an ideal choice for high current and power switching applications.

The specific data is subject to PDF, and the above content is for reference