IXFH36N55Q2

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The IXFH36N55Q2 is a N-channel MOSFET (metal oxide semiconductor field effect transistor) manufactured by IXYS Corporation. It is a surface-mount device with a self-protected, N-channel enhancement mode MOSFET design packaged in a TO-263AB or D2Pak housing.

The IXFH36N55Q2 offers excellent performance in power switching applications, such as synchronous rectification and high-side or low-side switching. It can be used in both low voltage and high voltage switching applications, from several hundred volts up to 1,500 volts in application-specific circuits.

The IXFH36N55Q2 is designed for use in a variety of power supply and power control applications. It offers excellent RDS-on characteristics and a low threshold voltage for increased efficiency. It also features a fast response rate for improved switching performance.

The working principle of the IXFH36N55Q2 device is based on a transistor structure called \'field effect transistor\'. Field effect transistors (FETs) are one of the most commonly used three-terminal active semiconductor devices. FETs work on the principle of conducting a current between source and drain when the gate-source voltage is applied and the current is proportional to that voltage.

The MOSFET is one type of FET where the input voltage is applied to the gate, which creates an electric field. This electric field pushes the electrons from the source to the drain, closing the channels of the transistor and allowing current to pass through. The drain-source voltage in turn controls the PMosFet\'s resistance.

The IXFH36N55Q2 device is a single-channel MOSFET with an extremely low on-resistance and gate-source threshold voltage. It also features a controllable avalanche current allowing for a high level of safety and robustness against short-circuit and other fault conditions. In addition, the IXFH36N55Q2 has low gate charge and high-speed switching capability making it suitable for both low voltage and high switching frequencies.

The IXFH36N55Q2 is mainly used in the automotive, telecom, computing and industrial markets due to its low on-state resistance and high current capability. It is commonly used in synchronous rectification, inverter topologies, motor control, power factor correction and high power switching applications.

In summary, the IXFH36N55Q2 is a single-channel N-channel MOSFET offering excellent performance in power switching applications. It is designed for high voltage and low voltage applications, with a low gate-source threshold voltage and a fast response rate. It features a low on-state resistance and a controllable avalanche current for enhanced safety, making it suitable for a variety of power supply and power control applications.

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