IXFH50N20

The IXFH50N20 is a high-voltage MOSFET used for switching applications such as DC-DC converters, motor drives, LED lighting, and solar inverter. It is a medium-voltage power MOSFET with N-channel depletion-mode single-gate structure. It has an excellent current and power figure of merit.

The device is fabricated with the advanced trench power MOSFET technology to achieve low on-state resistance and high-temperature stability. It has low gate charge and a gate threshold voltage that is highly adjustable thanks to its drain-floating technology.

In application fields, the IXFH50N20 is widely used in motor drive applications, HID lighting systems, DC-DC converters, solar inverters, telecom rectifiers, and battery chargers. Motor drive applications include DC motors, AC motors, BLDC motors, brushless DC motors, and stepper motors. Also, HID lighting systems, such as automotive HID lamps, HID lamps for light towers, and hand-held torches, are able to make use of its current and power capabilities. The IXFH50N20 is considered a good fit for these systems due to its excellent figure of merit

The IXFH50N20 features an advanced drain-floating technology for high temperature stability, which also allows for a higher operating temperature and for higher performance. The device also features current sensing on the source as well as temperature protection. It comes with a low steady-state gate charge and a maximum low drain-source on-state resistance of at a VDS of 100V.

In terms of its working principle, the IXFH50N20 has a simple structure and uses a single N-channel depletion-mode MOSFET with a drain-floating technology. The device operates on the principles of the depletion-mode MOSFET, which controls the transistor’s operation by applying or removing voltage to/from the gate of the transistor. This causes the MOSFET to turn on or off by creating or destroying a conducting channel between the source and drain. By controlling the amount of voltage applied to the gate, the current flow through the MOSFET can be regulated. The combination of the gate-threshold voltage and the drain-source resistance of the device enables it to control larger amounts of power with a small gate voltage.

In conclusion, the IXFH50N20 is a powerful, high-voltage power MOSFET which is employed in a variety of applicative field which range from motor drives, DC-DC converters, solar inverters and telecom rectifiers. Its excellent figure of merit is enabled by the advanced trench power MOSFET technology and the drain floating technology. It allows for a greater current and power through a small gate voltage coupled with temperature protection and higher operating temperatures.