Allicdata Part #: | IXFH60N25Q-ND |
Manufacturer Part#: |
IXFH60N25Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 60A TO-247AD |
More Detail: | N-Channel 250V 60A (Tc) 360W (Tc) Through Hole TO-... |
DataSheet: | IXFH60N25Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFH60N25Q is an N-Channel enhancement mode field effect transistor (FET) manufactured by Infineon Technologies. It is used in applications including DC-to-DC converters, motor control and various other power management functions. This FET features a low resistance RDS(on) of 0.32ohms and an operating temperature range of -55°C to 175°C.
The IXFH60N25Q MOSFET was designed to act as a load switch in DC to DC converters. It is a very powerful transistor with a maximum drain source voltage of 600V, a continuous drain current of 60A (33A repetitive) and avalanche energy of 420mJ. By utilizing its low resistance and high power capabilities, the IXFH60N25Q allows for smoother motion control than that of a P-MOSFET.
The IXFH60N25Q works by allowing a small current flow in the gate of the FET when the voltage exceeds a predetermined voltage level. Hence, the current can be increased significantly due to the voltage across the source and the drain. When the voltage at the gate is reduced, the current is reduced proportionally, allowing the device to act as a switch.
The IXFH60N25Q also has a dynamic dV/dt/crss rating of 1000V/ns, making it ideal for gate driving applications. This FET has a very low gate charge rate, meaning its switching frequency can be reduced and its transition time will remain constant. The switching frequency can also be reduced due to the FET’s body-diode characteristics.
In conclusion, the IXFH60N25Q is a powerful N-Channel enhancement mode field effect transistor (FET). It is used in applications such as DC-to-DC converters and motor control. This FET features a low resistance RDS(on) of 0.32ohms, a maximum drain voltage of 600V, and a continuum drain current of 60A (33A repetitive). It also has a dynamic dV/dt/crss rating of 1000V/ns and a low gate charge. These features make the IXFH60N25Q an ideal choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFH160N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 160A TO-... |
IXFH22N50P | IXYS | -- | 44 | MOSFET N-CH 500V 22A TO-2... |
IXFH26N50P3 | IXYS | -- | 68 | MOSFET N-CH 500V 26A TO-2... |
IXFH26N60P | IXYS | 5.03 $ | 44 | MOSFET N-CH 600V 26A TO-2... |
IXFH30N50P | IXYS | -- | 23 | MOSFET N-CH 500V 30A TO-2... |
IXFH34N65X2 | IXYS | -- | 65 | MOSFET N-CH 650V 34A TO-2... |
IXFH42N60P3 | IXYS | 5.54 $ | 30 | MOSFET N-CH 600V 42A TO24... |
IXFH50N60P3 | IXYS | 5.89 $ | 37 | MOSFET N-CH 600V 50A TO24... |
IXFH52N50P2 | IXYS | 6.53 $ | 47 | MOSFET N-CH 500V 52A TO24... |
IXFH9N80 | IXYS | 6.97 $ | 3 | MOSFET N-CH 800V 9A TO-24... |
IXFH24N80P | IXYS | -- | 43 | MOSFET N-CH 800V 24A TO-2... |
IXFH21N50 | IXYS | 6.99 $ | 60 | MOSFET N-CH 500V 21A TO-2... |
IXFH36N60P | IXYS | -- | 88 | MOSFET N-CH 600V 36A TO-2... |
IXFH76N07-12 | IXYS | 7.4 $ | 69 | MOSFET N-CH 70V 76A TO-24... |
IXFH6N100Q | IXYS | 7.43 $ | 73 | MOSFET N-CH 1000V 6A TO-2... |
IXFH76N07-11 | IXYS | 7.77 $ | 237 | MOSFET N-CH 70V 76A TO-24... |
IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
IXFH14N100Q2 | IXYS | -- | 58 | MOSFET N-CH 1000V 14A TO-... |
IXFH270N06T3 | IXYS | 4.46 $ | 139 | 60V/270A TRENCHT3 HIPERFE... |
IXFH30N85X | IXYS | 7.88 $ | 8 | MOSFET N-CH 850V 30A TO24... |
IXFH180N20X3 | IXYS | 9.26 $ | 15 | 200V/180A ULTRA JUNCTION ... |
IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
IXFH67N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 67A TO-2... |
IXFH35N30 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 35A TO-2... |
IXFH13N50 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 13A TO-2... |
IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
IXFH32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A TO-2... |
IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
IXFH58N20Q | IXYS | -- | 1000 | MOSFET N-CH 200V 58A TO-2... |
IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
IXFH14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A TO-... |
IXFH150N17T | IXYS | -- | 1000 | MOSFET N-CH 175V 150A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
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