Allicdata Part #: | IXFH7N100P-ND |
Manufacturer Part#: |
IXFH7N100P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 1000V 7A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFH7N100P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 6V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2590pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | HiPerFET™, Polar™ |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AIXFH7N100P is an enhancement-type Field Effect Transistor (FET), most commonly known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is an integral component of many electrical circuits, due to its small size, low power consumption, and high gain characteristics.
A MOSFET is a four-terminal device consisting of three terminals: drain, gate, and source. The drain terminal is the output, while the gate and source terminals act as inputs. Whenever the gate to source voltage is positive, current can pass through the device, which means it is “on”. On the other hand, when the gate to source voltage is negative, there is no current flow, and the device is “off”.
The AIXFH7N100P is a high-speed MOSFET with a variety of applications. It is commonly used in automotive, industrial, and telecommunications applications. In automotive applications, it is used for power control and regulation in engines and other automotive systems, as well as for solenoid actuation and motor control. AIXFH7N100P is also used in industrial applications, such as circuit breakers, power supplies, and metering equipment. In telecommunications, it can be used for base station power amplifiers, high power gain, and high frequency communications.
AIXFH7N100P’s working principle is based on the flow of electrons between the source and drain terminals. When the gate voltage is at a positive potential, holes accumulate near the surface of the channel. These holes create an electric field and the electrons in the channel are attracted to the positive potential, forming a conducting channel between the drain and source. This current is known as the drain current and this is how the AIXFH7N100P works.
AIXFH7N100P is also known for its high gain characteristics. The higher the amount of current flowing, the lower the amount of power required to switch the FET. This makes it desirable for applications where there is limited space, and low power available, or applications where low-voltage battery supplies are used. It also makes it an ideal choice for other, more demanding applications where power efficiency is an important factor.
AIXFH7N100P is a versatile device that can be used in a wide range of applications, from automotive to telecommunications. Its small size and high gain characteristics make it particularly well suited for portable applications, as well as providing a low-power option for more sensitive applications. With its robust construction and low power consumption, AIXFH7N100P is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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