| Allicdata Part #: | IXFH7N90Q-ND |
| Manufacturer Part#: |
IXFH7N90Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 900V 7A TO-247 |
| More Detail: | N-Channel 900V 7A (Tc) 180W (Tc) Through Hole TO-2... |
| DataSheet: |  IXFH7N90Q Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXFH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFH7N90Q is an insulated-gate field-effect transistor (IGFET), commonly referred to as an MOSFET. Specifically, it is an Enhancement Mode N-channel MOSFET, meaning it is an N-channel transistor that switches from off to on when the drain-source voltage (Vgs) is greater than the threshold voltage (Vgs(th)) of the MOSFET. It has a maximum drain current (Id) of 7 A and a maximum drain-source voltage (Vdss) of 900 V.
The IXFH7N90Q is a versatile transistor and can be used in a variety of applications including power supplies, DC/DC converters, and motor control circuits. Its low on-resistance of 0.195 ohms, combined with its high current capabilities, makes it ideal for switching high-power loads quickly. It can also be used in voltage-controlled switch circuits, such as those used in radio frequency (RF) switching applications.
The IXFH7N90Q is a drain-gate-source type of device, meaning the three terminals (drain, gate, and source) are connected in series. To turn the device on, a voltage source needs to be connected between the gate and source terminals, and the corresponding voltage (Vgs) needs to be greater than the threshold voltage, Vgs(th). When the voltage is applied, the gate-source voltage creates a field which inverts the conductivity type of a portion of the substrate material (typically silicon) between the drain and source electrodes, allowing current to flow from drain to source when a voltage is applied between them.
The IXFH7N90Q has a high drain-source on-resistance and the resistance decreases with increase in gate source voltage. This property makes it desirable for high-frequency applications since it reduces the power loss associated with the internal shutdown of the device. The device also exhibits a rapid turn-on / turn-off speed and can operate in pulse operation mode, making it an ideal choice for switching high power loads quickly and efficiently.
The IXFH7N90Q is a versatile device and can be used in a variety of different applications. It is a great choice for switching high-power loads quickly and efficiently, and is also suitable for high-frequency applications due to its low on-resistance and rapid turn-on / off speed. It is an ideal choice for powering DC/DC converters and motor control circuits, as well as for RF switching applications such as voltage-controlled switches.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IXFH40N85X | IXYS | -- | 25 | MOSFET NCH 850V 40A TO247... |
| IXFH50N85X | IXYS | -- | 65 | 850V/50A ULTRA JUNCTION X... |
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| IXFH60N65X2 | IXYS | -- | 60 | MOSFET N-CH 650V 60A TO-2... |
| IXFH20N85X | IXYS | -- | 9 | 850V/20A ULTRA JUNCTION X... |
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| IXFH22N55 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 550V 22A TO-2... |
| IXFH15N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 15A TO-2... |
| IXFH20N60 | IXYS | -- | 1000 | MOSFET N-CH 600V 20A TO-2... |
| IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
| IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
| IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
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| IXFH40N30Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 300V 40A TO-2... |
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| IXFH20N80Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 20A TO-2... |
| IXFH26N60Q | IXYS | -- | 1000 | MOSFET N-CH 600V 26A TO-2... |
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