IXFK27N80 Allicdata Electronics
Allicdata Part #:

IXFK27N80-ND

Manufacturer Part#:

IXFK27N80

Price: $ 13.59
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 27A TO-264AA
More Detail: N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFK27N80 datasheetIXFK27N80 Datasheet/PDF
Quantity: 1000
25 +: $ 12.35350
Stock 1000Can Ship Immediately
$ 13.59
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK27N80 is a very common type of Field Effect Transistor (FET) manufactured by IXYS. FETs are active semiconductor components that can be used to switch electrical signals and control electrical currents. The IXFK27N80 is a single N-channel MOSFET, and is part of a larger series of N-channel MOSFETs made by IXYS. It is used in a variety of commercial, industrial and consumer applications such as in digital logic circuits, DC-DC converters, motor control circuits and switching power supplies.

The basic working principle behind FETs is the electronic charge carriers (electrons or holes) flowing through the transistor\'s channel and the drain and source which act as two terminals. The gate is the third terminal, which is insulated from the other two. When a voltage is applied to the gate, a field is generated which modulates the conductivity of the transistor\'s channel. This in turn will control the current flow between the drain and source. This is the basic principle of how a FET works, and the IXFK27N80 is no exception.

The IXFK27N80 is a standard single N-channel MOSFET, with an equal source and drain voltage. In terms of features, this FET is well-suited to a range of applications, and due to its versatility, it is an excellent choice for many designs. It has very low on-resistance (≈ 7.2 milliohms), high switching speed, high peak current of 350A and an operating temperature range of -55°C to +175°C.

Due to these features, the IXFK27N80 MOSFET is able to perform very well in a number of different applications. It is most commonly used in DC-DC converters and motor control circuits, as it can handle high current, high frequency and large voltage swings. It also has wide application scope in industrial and consumer area. Because of the high frequency and small package, the IXFK27N80 is used for low noise power supply, lighting dimmers and in power switch circuits. It can also be used in audio amplifiers, signal amplifiers and RF applications.

The IXFK27N80 is part of a larger series of FETs that are manufactured by IXYS. It is one of the most commonly used FETs on the market today, due to its versatility, large range of features and its ability to perform reliably in a variety of applications. The IXFK27N80 is an excellent choice for designers looking for a reliable, versatile and cost-effective solution for their designs.

The specific data is subject to PDF, and the above content is for reference

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