IXFK34N80 Allicdata Electronics
Allicdata Part #:

IXFK34N80-ND

Manufacturer Part#:

IXFK34N80

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 34A TO-264AA
More Detail: N-Channel 800V 34A (Tc) 560W (Tc) Through Hole TO-...
DataSheet: IXFK34N80 datasheetIXFK34N80 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 240 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFK34N80 is a power MOSFET (metal-oxide-semiconductor field-effect-transistor) developed by CPES, a renowned company specialised in automotive solutions. This FET (Field Effect Transistor) is the ideal solution for use in power management, motor control, and high-frequency switching applications within rugged and thermally robust automotive environments. IXFK34N80 is suitable for applications such as Windows & Sunroof, HVAC, Body Electronics, Seat Control and Lighting Effort.

IXFK34N80 MOSFET has N-Channel design and comes in a TO-247 package The breakdown voltage of this device is 80V and its continuous drain current rating is upto 35A. This power MOSFET provides low gate charge resulting in improved switching performance and a reduced circuit complexity amond other benefits. It also features a low on-state resistance and drain-source breakdown voltage which makes it an ideal device for power management. This device is available in Tape and Reel form for automated production line and standard handling.

The working principle of IXFK34N80 is very straightforward. It is a three-terminal device consisting of gate, source and drain. A control signal at the gate terminal determines the conduction level between drain and source. When the gate voltage is close to the source voltage, the current flow between drain and source is closed and thus this device is said to be in the OFF state. On the other hand when the gate voltage is higher than the source voltage, current flows from source to drain and thus the device is said to be in the ON state.

This device is ideal for applications such as Switched Mode Power Supplies, Battery Chargers, DC-DC converters and Motor Drives. Additionally, it has excellent thermal capability and a very low gate charge resulting in improved switching performance. Its fast switching time combined with low internal capacitance and on-state resistance make IXFK34N80 suitable for high frequency switching operations with minimum switching losses. Furthermore, its rugged design and high voltage rating make it suitable for use in automotive environment.

In conclusion IXFK34N80 MOSFET is a power device with efficient ON and OFF state and remarkable thermal capability. It has the capability to switch ON and OFF within microseconds and is suitable for use in a wide range of automotive applications. Its rugged design, low gate charge and excellent thermal capability makes IXFK34N80 the preferred choice for high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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