IXFK26N100P

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The IXFK26N100P is a single P-Channel enhancement mode field-effect transistor (FET) that is suitable for applications such as digital circuits, data communication systems, switching regulators and other power control circuits. It is designed to be used in power MOSFETs and Voltage Regulator Modules (VRMs).

The IXFK26N100P is specifically designed to minimize on-state resistance while providing superior switching performance. It also provides an extended drain-source voltage (VDS) rating up to 30V. In addition, it provides an extended channel temperature operating range of -55C to 150C.

The IXFK26N100P is a high-speed FET characterized by its low gate-source capacitance and low gate-source threshold voltage or Vth. It also features a high transconductance or gm, which provides superior performance under light load conditions. Its high switching speed ensures faster turn-on and turn-off times than comparable devices.

The IXFK26N100P is constructed from two epitaxial layers, one N-type and one P-type. This construction technique ensures extreme reliability and helps reduce the on-resistance per unit area. The IXFK26N100P also features an input capacitance that ranges from 50 pF to 150 pF. This allows for more stable operation in noisy environments.

The working principle of the IXFK26N100P is based on the FET’s ability to amplify the signal across its gate electrode and control the current in its drain-source path. It is designed to be operated in enhancement mode, where the FET turns on when the voltage applied to its gate is greater than the threshold voltage. The voltage at the gate terminals varies the resistance between the drain and the source terminals, allowing for current to flow through the device.

The IXFK26N100P is mainly used for switching applications, and the drain current (ID) is proportional to the gate-source voltage. If the gate voltage is increased beyond the threshold voltage, the drain current kept increasing almost exponentially. In some cases, the FET can be also used as a voltage regulator, an analog signal amplifier or as an adjustable current source.

In summary, the IXFK26N100P is an N-Channel enhancement mode field-effect transistor that is suitable for applications such as digital circuits, data communication systems, switching regulators and other power control circuits. It has a low on-state resistance, and a wide range of operating voltage, current and power. It also has a low gate-source capacitance and a high transconductance, which provides superior performance under light loads. Furthermore, it has an extended drain-source voltage rating and an extended channel temperature operating range.

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