Allicdata Part #: | IXFK210N30X3-ND |
Manufacturer Part#: |
IXFK210N30X3 |
Price: | $ 18.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 300V/210A ULTRA JUNCTION X3-CLAS |
More Detail: | N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole T... |
DataSheet: | IXFK210N30X3 Datasheet/PDF |
Quantity: | 500 |
1 +: | $ 16.51860 |
25 +: | $ 14.04090 |
100 +: | $ 13.04970 |
Gate Charge (Qg) (Max) @ Vgs: | 375nC @ 10V |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24.2nF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 105A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 210A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXFK210N30X3 is a type of power MOSFET (metal–oxide–semiconductor field-effect transistor). It is designed for low off-state resistance for use in high-voltage applications, with the capability to carry a current rating of 30 A. This type of transistor is well-suited for a wide range of power switching applications, such as in industrial power supplies and motor control.
The structure of a power MOSFET is generally composed of an oxide layer sandwiched between a source and drain region. A gate oxide layer is also present, which serves as the interface between the gate electrode and the source and drain regions. When a suitable voltage is applied to the gate electrode, the oxide layer become relatively thin and the current flow across the source and drain region is controlled by the voltage. Thus, the MOSFET acts as a current switch, allowing or preventing the flow of current, depending on the applied voltage.
Specifically, the IXFK210N30X3 operates in the depletion mode and has an activation voltage of 10 V. It is terminated in an up-to-date DPAK (dual in-line transistor package) configuration that allows for the wiring of multiple transistors side-by-side. This allows for more compact designs with better performance and improved heat dissipation.
The IXFK210N30X3 is well-suited for a wide range of power applications, including power supplies, motor control, and high-current switching applications. It features a low on-resistance of only 3 mΩ, allowing it to deliver high currents while consuming low power. Additionally, the IXFK210N30X3’s rugged package and low profile make it suitable for use in high-vibration and temperature environments.
High-power, high-current applications require reliable switching transistors, and the IXFK210N30X3 fits the bill. Its low on-resistance and wide voltage range make it suitable for a wide range of applications, from motor control to high-current switching applications. In addition, the IXFK210N30X3’s low profile and rugged package ensures that it is well-suited for use in high-vibration and temperature environments.
The specific data is subject to PDF, and the above content is for reference
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