IXFK26N90

The IXFK26N90 is a useful component with a variety of applications, most of which are related to transistors and metal-oxide semiconductor field effect transistors (MOSFETs). The IXFK26N90 is classified as a single MOSFET, made of gallium arsenide and designed to be powerful, with a high peak current rating. It is most often used in applications that are as diverse as microwave amplifiers, fan controllers, and power conversion systems.

Specifications

The IXFK26N90 features an array of characteristics that make it well-suited for the tasks it is intended to perform. It has a breakdown voltage rating of 26 V, a drain-source breakdown voltage (BVdss) of 36 V, and a drain-source impedance of 135 ohms. Its peak current rating is a generous 90 Amps, and it is rated for temperatures as low as -55 degrees Celsius and as high as +175 degrees Celsius. Its thermal resistance rating is 4.3°C/W and it requires a gate voltage rating between 10 and 20 V.

Features & Benefits

Given its impressive specifications, it is no surprise that the IXFK26N90 offers multiple benefits and features. For starters, this MOSFET is specifically designed to minimize power loss and minimize heating issues. It is well-suited for use in power amplification, radio frequency switching, and audio amplifiers. Due to its advanced thermal management system, it can be used in high-power, high-speed systems without negatively affecting performance.

Its generous peak current rating of 90 Amps ensures that the IXFK26N90 can handle heavy loads with ease, while its gate voltage rating between 10 and 20 V provides the necessary control over its charge and discharge. This makes it well-suited for use in power conversion systems, fan controllers, and pulse-width modulation circuits.

Working Principle

As the name implies, the IXFK26N90 is a single MOSFET. MOSFETs are transistors that are made of metal and oxide and are used for amplifying or switching electronic signals. This type of transistor works by controlling the conductivity of the underlying silicon substrate via an applied voltage. Unlike a bipolar transistor, which uses positive and negative currents, a MOSFET is gated and voltage-based, meaning that its current is managed solely by the amount of voltage applied. This makes it very efficient and well-suited for applications that require higher power and greater control.

When voltage is applied to the gate electrode of the IXFK26N90 transistor, it creates a field that can increase or decrease the conductivity of the underlying silicon substrate. This changes the current flow, allowing it to be either amplified or switched off. This makes the IXFK26N90 well-suited for use in high-power applications such as microwave amplifiers, fan controllers, and power conversion systems.

Conclusion

The IXFK26N90 is a single MOSFET designed for demanding high power applications. Its impressive peak current rating of 90 Amps, along with its gate voltage rating between 10 and 20 V, makes it an ideal choice for systems that require high performance and precision. Its use of advanced thermal management ensures efficient operation, while its high-speed switching makes it a great choice for radio frequency and audio amplifier circuits. The IXFK26N90 is a powerful and reliable component that is sure to meet the demands of even the highest power applications.