Allicdata Part #: | IXFK44N50F-ND |
Manufacturer Part#: |
IXFK44N50F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS-RF |
Short Description: | MOSFET N-CH 500V 44A TO264 |
More Detail: | N-Channel 500V 44A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | IXFK44N50F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 156nC @ 10V |
Series: | HiPerRF™ |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The IXFK44N50F is a Field Effect Transistor (FET) electrical component with a certain application field. It is a standard 500V N-channel low gate charge Field Effect Transistor (FET). This type of FET has been designed to have higher performance than a conventional power MOSFET, yet with a low gate charge to save time in the design. It is well suited for use in a variety of power management applications including power converters, power supplies, and high-speed switching circuits.The IXFK44N50F has a certain working principle that allows it to make more efficient use of power and achieve higher speed. The working principle is based on the use of a gate charge to attract electrons from the source terminal to the drain terminal. This process creates a voltage gain that enhances the flow of electrons in a circuit, significantly increasing efficiency and cutting down on power losses.The IXFK44N50F also has a wide range of features designed to make it suitable for a range of applications. For example, it has a rated drain-to-source voltage of 500V and a maximum operating temperature of 175C. It also allows for a very fast switching speed of 2.5 nanoseconds. The device also comes with a gate charge of 55nC, which is much lower than the typical MOSFET device, allowing for faster design and development.Other features of the IXFK44N50F include a low on-resistance of 7.3m? and an upper limit gate-to-source voltage of 30V. It has an extremely low output capacitance of 21pF, allowing for improved signal transition time and reduced power losses. This makes the IXFK44N50F highly suitable for high efficiency power converters and power supplies. The IXFK44N50F also has an excellent threshold voltage of 2V, which contributes to a reduced power loss and increased efficiency.In summary, the IXFK44N50F is a Field Effect Transistor (FET) electrical component designed for use in a variety of power-related applications including high-efficiency power converters, power supplies, and high-speed switching circuits. The component features a high voltage rating, fast switching speed, low gate charge and low output capacitance, making it suitable for a wide variety of applications. The IXFK44N50F also has an excellent threshold voltage that helps reduce power loss and improve efficiency.The specific data is subject to PDF, and the above content is for reference
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