IXTA230N075T2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXTA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	178nC @ 10V
Series:	TrenchT2™
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	230A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTA230N075T2 is an advanced high-speed power MOSFET. It has a remarkable combination of characteristics, including a breakdown voltage of 230V, high current tolerance and a low on-resistance of 75 mΩ. As a result, the device can provide superior power and performance in low-voltage and high-current switching, which makes it suitable for a variety of applications. This device is particularly suitable for use in power management and energy conversion circuits, such as switched-mode power supplies (SMPS), industrial control systems, and uninterruptible power supplies (UPS). IXTA230N075T2 can also be used in automotive power converters, DC-DC converter circuits, and in a wide range of electronic systems, as well as for applications such as motors and actuators.The main feature of the IXTA230N075T2 is its low on-resistance of 75mΩ, which allows it to switch at a high-frequency with minimal losses. This makes it highly efficient; it can handle high current loads up to 35 A with minimal power loss. Additionally, the device is extremely fast and can switch in as low as 10 ns, giving it the advantage of a faster response time when handling high-speed signals.The working principle behind the IXTA230N075T2 is based on the ability of the device to control the flow of current through it. This is achieved by the application of Gate-Source voltage (VGS) to the Gate terminal, which will turn the device on or off. By varying this voltage, the device can be switched on and off, thereby controlling the flow of current through the device. Furthermore, the IXTA230N075T2 device has a high breakdown voltage rating of 230V, which allows it to be used in high voltage applications. This makes it suitable for use in high voltage switching applications such as motor control and power management.In conclusion, the IXTA230N075T2 is an advanced power MOSFET device that is suitable for use in a variety of applications, from high-speed signal processing to high voltage switching applications. Thanks to its high current rating, low on-resistance and fast switching speeds, the device provides superior power and performance in low-voltage and high-current switching.

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