| Allicdata Part #: | IXTP3N100D2-ND |
| Manufacturer Part#: |
IXTP3N100D2 |
| Price: | $ 2.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 3A TO220AB |
| More Detail: | N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP3N100D2 Datasheet/PDF |
| Quantity: | 82 |
| 1 +: | $ 2.11050 |
| 50 +: | $ 1.70264 |
| 100 +: | $ 1.53235 |
| 500 +: | $ 1.19181 |
| 1000 +: | $ 0.98750 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 37.5nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5.5 Ohm @ 1.5A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP3N100D2 is an enhancement-mode silicon-gate MOSFET transistor that was created and developed to handle power applications. The device features two independent source and drain terminals, as well as a control gate. This is a three-terminal device that includes the drain, source, and gate. The device is a single transistor, which can be connected to other transistors or integrated circuits to form power grids with a variety of configurations.
The working principle of the IXTP3N100D2 can be described in terms of potential differences. A potential difference is established between the drain and source terminals when an external voltage is applied to the gate. This potential difference establishes a current flow between the drain and source, which is controlled by the voltage applied to the gate. As the voltage applied to the gate increases, the potential difference between the drain and source also increases, resulting in increased current flow.
The IXTP3N100D2 has a number of different application fields. One is power conversion applications, which allow the device to be used in power supplies and converters. The device can also be used in motor control applications, such as servo-motors and brushed motors. Additionally, the IXTP3N100D2 can be used in communications applications, as it has a high switching speed and can provide fast response times. Finally, it can also be used in automotive applications, as its high current ratings make it suitable for use in vehicles.
The device also has a number of important characteristics that can affect its application field. The transistor has a very high drain-source breakdown voltage, which is in the range of 700V. The device has a low gate threshold voltage, which is only about 1V. This makes it suitable for use in systems that require high gate drive current levels. Additionally, the device has a low gate-source capacitance which is only 3.25pF. This makes the IXTP3N100D2 extremely suitable for high-frequency switching applications.
The IXTP3N100D2 is an ideal choice for power applications due to its extremely high current ratings. The device has a maximum drain current rating of 1.96A. It also has an RDS (on) value of 0.025MAX, which ensures low losses in the device. The IXTP3N100D2 is also an excellent choice for applications which require fast switching speeds, as it can turn on and off in less than 1 microsecond.
In conclusion, the IXTP3N100D2 is an excellent device for a wide range of power applications. Its three-terminal design, potential difference operation, and extremely high current ratings make it ideal for use in power conversion, motor control, communications, and automotive applications. It also has an extremely low gate-source capacitance and low gate threshold voltage, making it suitable for high-frequency switching applications. The device has an RDS(on) value of 0.025MAX which ensures excellent power efficiency and low losses in the circuit.
The specific data is subject to PDF, and the above content is for reference
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