| Allicdata Part #: | IXTP96P085T-ND |
| Manufacturer Part#: |
IXTP96P085T |
| Price: | $ 3.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 85V 96A TO-220 |
| More Detail: | P-Channel 85V 96A (Tc) 298W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP96P085T Datasheet/PDF |
| Quantity: | 1021 |
| 1 +: | $ 3.44610 |
| 50 +: | $ 2.77124 |
| 100 +: | $ 2.52491 |
| 500 +: | $ 2.04454 |
| 1000 +: | $ 1.72431 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 298W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13100pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 13 mOhm @ 48A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
| Drain to Source Voltage (Vdss): | 85V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP96P085T is an n-channel MOSFET (metal-oxide semiconductor field effect transistor) that has been designed to operate in a variety of applications. It has a maximum drain-source voltage of 80V, a maximum current of 19A and a package style of DPAK-3. The IXTP96P085T has been specifically designed to use as a switch in applications with extremely high voltage and power requirements like automotive and industrial applications. The IXTP96P085T is a single component, so no other devices are needed to operate it.
The working principle of an IXTP96P085T can be best explained using the Generalized MOSFET structure shown in the figure below. The device consists of four active device regions which are the source, drain, gate and body. The source and drain regions have n-type doping and the gate is p-type. The body of the device is connected to the source and has a high-impedance connection with the gate. When a voltage is applied to the gate, electrons will be attracted towards it and into the available space in the drain region. This process is called inversion. The result will be an increase in the current flow from the source to the drain and the IXTP96P085T will begin to act as a switch.
The bulk of the device shown in the Galvanized MOSFET structure is actually a high-resistive channel that connects the source and drain regions. The amount of current that can flow through this channel is determined by the gate voltage. When the gate voltage is increased, more electrons will be attracted into the channel which will in turn increase the current that can flow from the source to the drain. Conversely, when the gate voltage is decreased, the amount of current that can flow from the source to the drain will be decreased.
The IXTP96P085T is available with various features and specs that are tailored for specific applications. It is available in both through-hole and surface mount versions and has a maximum operating temperature range of -55C to +150C. The IXTP96P085T is also able to handle high current and low on-resistance characteristics thanks to its design and performance ratings.
The IXTP96P085T is an excellent choice for applications requiring extremely high voltage and power such as automotive and industrial. It is ideal for use as a switch in these applications due to its superior current handling capabilities and low on-resistance characteristics. The IXTP96P085T is a reliable, cost-effective device that offers a high degree of safety and reliability.
The specific data is subject to PDF, and the above content is for reference
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