| Allicdata Part #: | IXTP10N60PM-ND |
| Manufacturer Part#: |
IXTP10N60PM |
| Price: | $ 1.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 5A TO-220 |
| More Detail: | N-Channel 600V 5A (Tc) 50W (Tc) Through Hole TO-22... |
| DataSheet: |  IXTP10N60PM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.83000 |
| 10 +: | $ 1.77510 |
| 100 +: | $ 1.73850 |
| 1000 +: | $ 1.70190 |
| 10000 +: | $ 1.64700 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1610pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 740 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP10N60PM is a single N-channel MOSFET in a low-cost, space-saving plastic package. This highly-integrated device is suitable for use in discrete power systems, including PWM switching applications. It has a low on-resistance and is capable of delivering moderate continuous drain current in pulse operation.
The IXTP10N60PM is a power MOSFET with built-in protection features suitable for a wide range of switch modes. This device is designed for low output capacitance and for high frequency operation. With an advanced enhanced mode, the IXTP10N60PM provides zero gate charge and excellent dynamic performance.
The IXTP10N60PM can be used in numerous applications, including switching converters (class E, B, and C), Class AB and other digital power supplies, LED drivers, and motor controllers. It features an improved avalanche capability, making it suitable for boosting, bucking, and buck-boost applications. The IXTP10N60PM has an integrated drain-source diode that eliminates the need for an external avalanche diode.
The IXTP10N60PM was designed with a low gate-source voltage (VGS) and a high drain-source voltage (VDS) breakdown rating. This allows for reliable operation in high-voltage and high-power environments. The device\'s impressive current capability offers superior switching performance, ensuring excellent power supply design optimization. The IXTP10N60PM also offers superior performance in terms of on-state resistance, providing excellent conduction at high switching frequencies.
The IXTP10N60PM also offers several key protection features to ensure a safe operation, such as overvoltage protection, temperature protection, and surge protection. Its superior surge capability significantly reduces electrical noise and increases system stability. Its higher temperature range of up to 200ºC ensures an improved reliability in high temperature environments, allowing it to be used in high-power applications.
The IXTP10N60PM is also suitable for use in very low-side ground systems. Its integrated low-side drain resistor offers excellent suppression of high frequency transients, allowing it to be reliably used in low-side systems. Its high survival rate and low maintenance requirements make it ideal for use in long-time operation and in industrial environments, providing reliable operation over extended periods of time.
The IXTP
The specific data is subject to PDF, and the above content is for reference
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