Allicdata Part #: | IXTP05N100-ND |
Manufacturer Part#: |
IXTP05N100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 0.75A TO-220 |
More Detail: | N-Channel 1000V 750mA (Tc) 40W (Tc) Through Hole T... |
DataSheet: | IXTP05N100 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 Ohm @ 375mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 750mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP05N100 is a N-channel MOSFET that is commonly used in power control applications due to its robustness and wide temperature range. In this article, we will explore the application fields of the IXTP05N100, and the working principle behind it.
Application Fields
The IXTP05N100 is well suited for use as a switched-mode power supply (SMPS) power switch as it can be used to quickly switch between high voltage/current states. Its low gate threshold voltage and relatively low RDS(on) also make it a viable choice for applications ranging from load switching, to pulse circuits and motor controllers. In order to efficiently switch a load with the IXTP05N100 a suitable logic gate, such as an SRL or an inverter, must be used.
Working Principle
The IXTP05N100 operates on an principle known as “enhancement-type” operation. This means that the MOSFET is normally “off”. A low gate voltage applied to the gate terminal will cause a corresponding change of current between the source and the drain terminals. Depending on the voltage applied to the gate, the drain-source current (I_DS) can be varied from a few microamps up to the limit set by the P-channel, source voltage, and other factors.
This MOSFET operates on the principle known as body effect. This causes the transistor to conduct only when the voltage applied to the body terminal is greater than the voltage applied to the gate terminal, allowing the transistor to switch “on” or “off”. When conducting, the IXTP05N100 can be turned off again by lowering the gate voltage below the voltage on the body terminal.
The IXTP05N100 also features reduced switching losses, eliminating the need for additional components to dissipate heat. This feature is especially useful in applications that require a high frequency or short on/off times.
Conclusion
The IXTP05N100 is an N-channel MOSFET that is designed for use in applications with high voltage and current, such as switched-mode power supplies and pulse circuits. It operates on the principles of enhancement-type operation and body effect, and features reduced switching losses, eliminating the need for additional components for heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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