IXTP05N100 Allicdata Electronics
Allicdata Part #:

IXTP05N100-ND

Manufacturer Part#:

IXTP05N100

Price: $ 1.43
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 0.75A TO-220
More Detail: N-Channel 1000V 750mA (Tc) 40W (Tc) Through Hole T...
DataSheet: IXTP05N100 datasheetIXTP05N100 Datasheet/PDF
Quantity: 1000
1 +: $ 1.43000
10 +: $ 1.38710
100 +: $ 1.35850
1000 +: $ 1.32990
10000 +: $ 1.28700
Stock 1000Can Ship Immediately
$ 1.43
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP05N100 is a N-channel MOSFET that is commonly used in power control applications due to its robustness and wide temperature range. In this article, we will explore the application fields of the IXTP05N100, and the working principle behind it.

Application Fields

The IXTP05N100 is well suited for use as a switched-mode power supply (SMPS) power switch as it can be used to quickly switch between high voltage/current states. Its low gate threshold voltage and relatively low RDS(on) also make it a viable choice for applications ranging from load switching, to pulse circuits and motor controllers. In order to efficiently switch a load with the IXTP05N100 a suitable logic gate, such as an SRL or an inverter, must be used.

Working Principle

The IXTP05N100 operates on an principle known as “enhancement-type” operation. This means that the MOSFET is normally “off”. A low gate voltage applied to the gate terminal will cause a corresponding change of current between the source and the drain terminals. Depending on the voltage applied to the gate, the drain-source current (I_DS) can be varied from a few microamps up to the limit set by the P-channel, source voltage, and other factors.

This MOSFET operates on the principle known as body effect. This causes the transistor to conduct only when the voltage applied to the body terminal is greater than the voltage applied to the gate terminal, allowing the transistor to switch “on” or “off”. When conducting, the IXTP05N100 can be turned off again by lowering the gate voltage below the voltage on the body terminal.

The IXTP05N100 also features reduced switching losses, eliminating the need for additional components to dissipate heat. This feature is especially useful in applications that require a high frequency or short on/off times.

Conclusion

The IXTP05N100 is an N-channel MOSFET that is designed for use in applications with high voltage and current, such as switched-mode power supplies and pulse circuits. It operates on the principles of enhancement-type operation and body effect, and features reduced switching losses, eliminating the need for additional components for heat dissipation.

The specific data is subject to PDF, and the above content is for reference

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