IXTP50N085T

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The IXTP50N085T MOSFET is an ideal choice for many specific applications as it has a very low RDS (on) resistance, which leads to superior power efficiency and higher power densities in a given application. The IXTP50N085T is also an ideal solution for high frequency switching applications, as the device has a low gate charge Qg, and good gate threshhold voltage with minimum variation. Additionally, the device comes with the Dual N-Channel MOSFET design, which allows for maximum power density in applications where longer term reliability is a requirement.

The device is classified as a single power MOSFET, with a low ON resistance (Rds(on)) between 40 milliohm and 150 milliohm and a maximum drain current Id of 16A. The device has a very low gate charge Qg of 4.8nC and a Gate Threshhold Voltage Vth of 0.8V, for increased power efficiency. It also has a maximum drain to source breakdown voltage BVDSS of 85V, with a Fast recovery diode, to ensure improved protection from transient voltage spikes.

The IXTP50N085T is a monolithic integrated power MOSFET with a low ON resistance, combined with a fast recovery diode, allows the device to handle high transient load currents. The IXTP50N085T has a low input capacitance Ciss and low gate threshold voltage Vth, help reduce switching losses and system costs. The maximum continuous idling power dissipation PD is 22W, allowing for superior power efficiency and high power densities.

The IXTP50N085T is designed specifically to provide ultra-low losses in a wide range of applications, ranging from low current to high current switching. It is an ideal solution for many power supply designs, as it has extremely low on-state resistance and superior rise and fall times for excellent switching efficiency. Additionally, the device also has an integrated fast recovery diode to minimize turn-off losses, further improving switching efficiency.

The IXTP50N085T’s unique single-channel design combines a P-channel MOSFET and an N-channel MOSFET. This design results in fast switching behavior with low gate charge and low input capacitance. Additionally, this design allows for minimum cross-conduction and maximum power density.

The IXTP50N085T has a wide range of applications in industrial, automation and consumer electronics as it is an excellent choice for power supply design, high frequency circuits, high current switching and low input capacitance requirements. Additionally, the device is also suitable for applications such as solenoid drivers and LED drivers.

The IXTP50N085T is designed to provide superior power density in high current switching applications, by combining its low resistance with an integrated fast recovery diode. The device offers an extremely low RDS (on) resistance between 40mOhm and 150mOhm, and a maximum drain current Id of 16A. The device also has a very low gate charge Qg of 4.8nC and a Gate Threshhold Voltage Vth of 0.8V. Additionally, the device also has a maximum drain to source breakdown voltage BVDSS of 85V and a maximum continuous idling power dissipation PD of 22W.

In summary, the IXTP50N085T is an ideal choice for many specific applications due to its low RDS (on) resistance, low gate charge Qg, and Gate Threshhold Voltage, further improving power efficiency and power density. Additionally, the device is also suitable for a wide range of applications, ranging from consumer electronics to industrial applications.

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