Allicdata Part #: | IXTP220N04T2-ND |
Manufacturer Part#: |
IXTP220N04T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 40V 220A TO-220 |
More Detail: | N-Channel 40V 220A (Tc) 360W (Tc) Through Hole TO-... |
DataSheet: | IXTP220N04T2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 112nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP220N04T2 is a component used in electrical and electronic equipment, and is most commonly used as a single field effect transistor (FET).
This component is based on a vertical, power MOSFET technology, which offers fast switching and low on-resistance, improving efficiency, and making it a viable component in many applications. The IXTP220N04T2 is able to handle currents up to a maximum of 50 amps and voltages up to 150 volts.
The IXTP220N04T2 is designed to handle a variety of applications, making it suitable for small-scale applications including power supplies, DC to DC converters and motor control circuits, as well as for more complex applications such as computers and other higher speed, current-intensive systems.
This transistor is also suitable for general-purpose switching, high-voltage AC and DC control circuits, and electromechanical motor speed control. Power supplies, and power amplifier circuits, are also possible applications.
The IXTP220N04T2 can handle a wide range of power levels, and is able to provide low ohmic losses, making it suitable for high-efficiency applications. The transistor is also relatively small in size and is capable of providing high current levels in high-power applications.
One of the main benefits of the IXTP220N04T2 is its high frequency capabilities. The device is able to switch on a frequency of up to 600 kilohertz, while the on-resistance is only 0.11-Ohms, making it extremely efficient.
The IXTP220N04T2 can also be used as a power device, which is especially useful for complex applications where peak current delivery may be required.
The working principle behind this device is based on the MOSFET process. The top of the MOSFET is composed of n-type silicon and the bottom of p-type silicon. A source is connected to the bottom of the transistor and a drain is connected to the top. The controlled voltage is applied to the gate of the device.
When a voltage is applied to the gate of the IXTP220N04T2, it modifies the conductivity of the electric charge located in the region between the source and the drain. When the voltage applied on the gate is zero then the MOSFET acts as an open circuit, while when the gate is charged then it acts as a closed circuit.
The IXTP220N04T2 is able to handle a wide range of applications, making it suitable for a variety of projects and applications. Its fast switching and low on-resistance capabilities make it a cost-effective solution for many applications. Its small size, high efficiency and reliable features also make it an attractive device in many design considerations.
The specific data is subject to PDF, and the above content is for reference
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