| Allicdata Part #: | IXTP32P05T-ND |
| Manufacturer Part#: |
IXTP32P05T |
| Price: | $ 1.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 50V 32A TO-220 |
| More Detail: | P-Channel 50V 32A (Tc) 83W (Tc) Through Hole TO-22... |
| DataSheet: |  IXTP32P05T Datasheet/PDF |
| Quantity: | 846 |
| 1 +: | $ 1.34820 |
| 50 +: | $ 1.08675 |
| 100 +: | $ 0.97808 |
| 500 +: | $ 0.76073 |
| 1000 +: | $ 0.63032 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1975pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 39 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP32P05T is a type of insulated-gate FET (IGFET). It is a nonlinear transistor used as a switch or amplifier. The IXTP32P05T belongs to a series of insulated-gate p-channel enhancement transistors produced by Sheffield Semiconductor.
The IXTP32P05T has a high switching speed and can handle high voltage and power. It is a high-speed MOSFET with low gate charge and low turn-on resistance. This MOSFET has a maximum junction temperature of 175C and an operating temperature range of -55C to 175C.
These IGFET transistors are widely used in power management, inverters, and motor drives. IXTP32P05T can be used in many applications such as power supplies, DC-DC converters, power conditioners and motor drivers. IXTP32P05T can also be used in applications that require high switching speed and power efficiency, such as high-frequency power amplifiers, radio-frequency amplifiers, and high-power audio amplifiers.
The IXTP32P05T is a single-channel MOSFET operating in the enhancement-mode. When a suitable voltage is applied to the gate, the MOSFET turns on and allows current to flow from source to drain. The IXTP32P05T can act as a current source or sink, depending on the magnetization direction of the connected load.
The IXTP32P05T has a low on-state resistance of 4.2 milliohms and a breakdown voltage of 30 volts. The threshold voltage of this MOSFET is 4 volts. The maximum drain-to-source voltage is 32 volts and the maximum drain current is 3.2 amps. The IXTP32P05T also has a fast switching speed with a characteristic rise time of 28 nanoseconds and a characteristic fall time of 24 nanoseconds.
The IXTP32P05T is an ideal choice for power management applications that require high performance and reliability. It is widely used in consumer and industrial electronics due to its low on-state resistance, high power, and fast switching speed. This MOSFET can also be used in medical, automotive and telecom applications.
The specific data is subject to PDF, and the above content is for reference
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