IXTP100N04T2 Allicdata Electronics
Allicdata Part #:

IXTP100N04T2-ND

Manufacturer Part#:

IXTP100N04T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 40V 100A TO-220
More Detail: N-Channel 40V 100A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: IXTP100N04T2 datasheetIXTP100N04T2 Datasheet/PDF
Quantity: 131
Stock 131Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2690pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
Series: TrenchT2™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTP100N04T2 Application Field and Working Principle

IXTP100N04T2 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) manufactured by Ixys Corporation. It is a 100V N-channel device and is used in various applications. It features a range of features such as a low gate charge and on-resistance. This article will discuss the application field and working principle of the IXTP100N04T2.

Application Field

The IXTP100N04T2 device is mainly used to address the needs of high-current switching applications in the automotive, industrial, and consumer electronics markets. It is ideal for a wide range of applications including professional power management, DC-DC/inverter systems, switch-mode power supplies, and motor drives.

The device is also suitable for power switching applications in the fields of robotics and industrial equipment. It is also commonly used in LED lighting, LED dimming, and LED displays. Additionally, it can be used in telecom and computing devices for controlling power delivery.

The device can provide a number of features depending on the application. It can provide protection against short circuits, over-voltage and over-temperature. It also can provide soft-start and pulse-width modulation support.

Working Principle

The IXTP100N04T2 device is a MOSFET, which means that it utilizes the phenomena of MOS (metal-oxide-semiconductor) capacitance to control the conduction of current by with a few volts of biasing. It allows the device to operate without a large voltage difference.

The way the device works is by having a N (negative) type of transistor. N-type transistors are basically transistors that have a negative charge on the gate electrode while a voltage (Vgs) is applied to the gate. When Vgs is applied the gate attracts electrons and they get pushed into the conduction channel of the MOSFET. As the applied Vgs increases, the number of electrons in the channel increases leading to an increase in the drain current (Id).

The IXTP100N04T2 also has a low gate charge, which means that it can quickly switch between on and off states. This allows the device to be used in applications with rapidly changing loads. The device also has a low on-resistance, which means that it experiences low resistance when it is conducting current, making it ideal for applications that require high current.

Conclusion

The IXTP100N04T2 is a MOSFET that is mainly used to address the needs of high-current switching applications in the automotive, industrial, and consumer electronics markets. Its features such as a low gate charge, low resistance, and protection makes it an ideal choice for these applications. Its working principle utilizes the phenomena of MOS capacitance to control the conduction of current with a few volts of biasing.

The specific data is subject to PDF, and the above content is for reference

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