IXTP98N075T Allicdata Electronics
Allicdata Part #:

IXTP98N075T-ND

Manufacturer Part#:

IXTP98N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 98A TO-220
More Detail: N-Channel 75V 98A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: IXTP98N075T datasheetIXTP98N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 100µA
Series: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXTP98N075T Application Field and Working Principle

The IXTP98N075T is a 75A, 800V n-channel Extended-Channel MOSFET (ECMOSFET) created by IXYS Corporation. The IXTP98N075T is an advanced device designed primarily for high current and low voltage applications. It is well suited for use in switch mode power supply (SMPS) and high power full-bridge inverter applications, such as home/office appliances, power tools, and electric vehicles.

This MOSFET consists of two voltage terminals labeled “source” and “drain”, and one control terminal called the “gate”. It has an improved on-resistance, low capacitance body-diode, and an ESD protection built using IXYS industries advanced low thermal resistance TO-264NC and TO-247AC packages. The device is manufactured using standard CMOS/DMOS fabrication process.

The basic principle of operation of the IXTP98N075T MOSFET is similar to that of any other MOSFET device. It consists of a source already filled with electrons, the drain and the gate. The voltage applied to the gate triggers the flow of electrons across the channel between the source and drain. This, in turn, produces a predetermined current flow and resistance between the source and the drain. This is known as a switch, because the flow of current through the channel can be controlled with the gate voltage.

The IXTP98N075T is capable of providing 800 Volts at 75 Amps of continuous current. Its on-resistance of just 6 milliohms and its low gate charge of only 11nC, allowing for a lesser than normal switch turn-on time. With its advanced Low Temperature Rise (LTR) Package, the device also thermally efficient, with a total power dissipation of 8W.

The low on-resistance and switch time of the IXTP98N075T make it perfect for use in high power and high voltage applications. Its advanced LTR package and ESD protection allows for superior performance with superior reliability. The device can also be used in automotive applications, as it meets the requirements for Automotive Electronics Council (AEC) Standard Q101. This makes the device suitable for applications such as alternative energy vehicles, such as electric and hybrid electric cars.

In conclusion, the IXTP98N075T is an excellent MOSFET device for use in high current and low voltage applications. It is capable of offering 800 Volts at 75 Amps of continuous current, with an improved on-resistance and low gate charge and low power dissipation. The device is also thermally efficient and has advanced ESD protection. It meets the requirements of the Automotive Electronics Council (AEC) Standard Q101, making it suitable for automotive and alternative energy applications.

The specific data is subject to PDF, and the above content is for reference

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