| Allicdata Part #: | IXTP54N30T-ND |
| Manufacturer Part#: |
IXTP54N30T |
| Price: | $ 2.72 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 300V 54A TO-220 |
| More Detail: | N-Channel 300V 54A (Tc) Through Hole TO-220AB |
| DataSheet: |  IXTP54N30T Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.44516 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 300V |
| Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
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The IXTP54N30T is a 3-terminal insulated gate bipolar transistor (IGBT). It is designed for high performance, general application switching and chopper-type inverter applications. It has been designed to meet the requirements of automotive and industrial applications such as DC/DC converters, uninterruptible power supplies, home and whitegoods, motor drive and industrial motor control.
The IXTP54N30T is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a single-channel structure. The single-channel structure provides high speed switching and low on-resistance. The low gate charge of the single-channel device provides for rapid turn-on and turn-off. The low gate impedance of the device allows for operation at high frequency. This makes it suitable for high speed switching applications.
The IXTP54N30T is a N-channel MOSFET and can be used for high current switching applications. The device consists of three terminals (source, gate and drain) and is fabricated in a planar structure. The source and drain terminals are insulated from the gate and body of the device. The device has an advantage over conventional N-channel MOSFETs in that it has a higher breakdown voltage. This allows the device to handle higher voltages than a conventional N-channel MOSFET.
The working principle of an IXTP54N30T is based on the fact that when an electric field is applied to the gate terminal of the device, a change in the width of the channel is produced. This results in a stimulation of conduction between the source and drain terminals. This conduction is proportional to the gate voltage. The device can be used for switching applications. When the gate voltage is applied, the device is switched on and current flows from the source to the drain. When the gate voltage is removed, the device is switched off and the current stops flowing.
The IXTP54N30T is an example of a single-channel MOSFET and has a range of applications. In automotive and industrial applications, it is used as a power switch for DC/DC converters, motor drives and home/whitegoods applications. It is also used for high frequency switching applications due to its low gate impedance. The IXTP54N30T is also ideal for chopper-type inverter applications due to its high speed switching capability.
The IXTP54N30T is a versatile device used in many applications. Its low on-resistance and high speed switching make it suitable for high current switching applications and it is well suited to automotive and industrial applications. Its low gate impedance and high breakdown voltage make it ideal for high frequency switching and chopper-type inverter applications.
The specific data is subject to PDF, and the above content is for reference
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