| Allicdata Part #: | IXTP1N80-ND |
| Manufacturer Part#: |
IXTP1N80 |
| Price: | $ 2.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 750MA TO-220AB |
| More Detail: | N-Channel 800V 750mA (Tc) 40W (Tc) Through Hole TO... |
| DataSheet: |  IXTP1N80 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.79550 |
| Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 11 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 750mA (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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Modern electronics demand efficient and reliable technologies. Power MOSFETs, such as the IXTP1N80, are designed to provide superior performance and reliability. This article will discuss the application field and working principle of IXTP1N80.
IXTP1N80 is a single proprietary logic level FET. It has low gate drive requirement, extended temperature range and improved power dissipation. It is suitable for off-line and DC-DC converters, and many other power electronics applications. It is composed of a single MT-MOS heterojunction structure. This is an entirely new approach to Power MOSFET design. With this design, the gate drive current requirement is reduced by as much as 100x compared to other MOSFETs. This contributes significantly to the low gate voltage noise immunity that the IXTP1N80 has. Furthermore, the extended temperature range ensures reliable performance under high temperature conditions. Lastly, due to the improved power dissipation, the IXTP1N80 delivers industry leading power dissipation.
The working principle of the IXTP1N80 can be described as follows. First, a gate voltage is applied to the IXTP1N80 to form a conductive channel between source and drain. This reduces the on-state resistance, allowing electrons to flow between source and drain. Secondly, the electrons will flow through the MT-MOS heterojunction structure. This structure provides superior conduction capability compared to traditional MOSFETs. Lastly, the low gate drive current requirement reduces the power consumption of the device compared to other MOSFETs.
In conclusion, the IXTP1N80 is a single proprietary logic level FET. It has low gate drive requirement, extended temperature range and improved power dissipation. The working principle involves forming a conductive channel between source and drain and electrons flowing through the MT-MOS heterojunction structure. These features make the IXTP1N80 ideal for applications such as off-line and DC-DC converters, and many other power electronics applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IXTP140P05T | IXYS | -- | 1998 | MOSFET P-CH 50V 140A TO-2... |
| IXTP75N10P | IXYS | 2.68 $ | 35 | MOSFET N-CH 100V 75A TO-2... |
| IXTP26P10T | IXYS | 1.87 $ | 1000 | MOSFET P-CH 100V 26A TO-2... |
| IXTP08N100P | IXYS | 1.27 $ | 1000 | MOSFET N-CH 1000V 800MA T... |
| IXTP62N15P | IXYS | 2.18 $ | 1000 | MOSFET N-CH 150V 62A TO-2... |
| IXTP1N100 | IXYS | 3.28 $ | 43 | MOSFET N-CH 1000V 1.5A TO... |
| IXTP140N12T2 | IXYS | 3.51 $ | 37 | 120V/140A TRENCHT2 POWER ... |
| IXTP160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
| IXTP3N60P | IXYS | 0.99 $ | 1000 | MOSFET N-CH 600V 3A TO-22... |
| IXTP12N50PM | IXYS | 1.83 $ | 1000 | MOSFET N-CH 500V 6A TO-22... |
| IXTP3N110 | IXYS | 4.62 $ | 1000 | MOSFET N-CH 1100V 3A TO-2... |
| IXTP300N04T2 | IXYS | 3.79 $ | 47 | MOSFET N-CH 40V 300A TO-2... |
| IXTP2N100P | IXYS | 1.71 $ | 1000 | MOSFET N-CH 1000V 2A TO-2... |
| IXTP2N80P | IXYS | 0.79 $ | 1000 | MOSFET N-CH 800V 2A TO-22... |
| IXTP200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
| IXTP36P15P | IXYS | 3.26 $ | 1000 | MOSFET P-CH 150V 36A TO-2... |
| IXTP160N04T2 | IXYS | 1.97 $ | 1000 | MOSFET N-CH 40V 160A TO-2... |
| IXTP120P065T | IXYS | 3.08 $ | 1000 | MOSFET P-CH 65V 120A TO-2... |
| IXTP60N20T | IXYS | 2.77 $ | 1000 | MOSFET N-CH 200V 60A TO-2... |
| IXTP1R6N50P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A TO-... |
| IXTP120N075T2 | IXYS | 1.97 $ | 1000 | MOSFET N-CH 75V 120A TO-2... |
| IXTP44P15T | IXYS | -- | 1000 | MOSFET P-CH 150V 44A TO-2... |
| IXTP100N04T2 | IXYS | -- | 131 | MOSFET N-CH 40V 100A TO-2... |
| IXTP1R6N100D2 | IXYS | 1.49 $ | 1000 | MOSFET N-CH 1000V 1.6A TO... |
| IXTP1N80P | IXYS | 1.41 $ | 1000 | MOSFET N-CH 800V 1A TO-22... |
| IXTP2N100 | IXYS | 2.5 $ | 1000 | MOSFET N-CH 1000V 2A TO-2... |
| IXTP08N100D2 | IXYS | -- | 283 | MOSFET N-CH 1000V 0.8A TO... |
| IXTP182N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 182A TO-2... |
| IXTP18P10T | IXYS | 1.48 $ | 1906 | MOSFET P-CH 100V 18A TO-2... |
| IXTP50N20PM | IXYS | 2.95 $ | 1000 | MOSFET N-CH 200V 20A TO-2... |
| IXTP18N60PM | IXYS | 3.05 $ | 1000 | MOSFET N-CH TO-220N-Chann... |
| IXTP110N055T2 | IXYS | -- | 1000 | MOSFET N-CH 55V 110A TO-2... |
| IXTP01N100D | IXYS | 3.57 $ | 1500 | MOSFET N-CH 1KV .1A TO-22... |
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| IXTP02N120P | IXYS | -- | 1595 | MOSFET N-CH 1200V 0.2A TO... |
| IXTP90N15T | IXYS | 2.41 $ | 1000 | MOSFET N-CH 150V 90A TO-2... |
| IXTP76P10T | IXYS | 3.79 $ | 4094 | MOSFET P-CH 100V 76A TO-2... |
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