IXTP1N80 Allicdata Electronics
Allicdata Part #:

IXTP1N80-ND

Manufacturer Part#:

IXTP1N80

Price: $ 2.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 750MA TO-220AB
More Detail: N-Channel 800V 750mA (Tc) 40W (Tc) Through Hole TO...
DataSheet: IXTP1N80 datasheetIXTP1N80 Datasheet/PDF
Quantity: 1000
1 +: $ 1.79550
Stock 1000Can Ship Immediately
$ 2
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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Modern electronics demand efficient and reliable technologies. Power MOSFETs, such as the IXTP1N80, are designed to provide superior performance and reliability. This article will discuss the application field and working principle of IXTP1N80.

IXTP1N80 is a single proprietary logic level FET. It has low gate drive requirement, extended temperature range and improved power dissipation. It is suitable for off-line and DC-DC converters, and many other power electronics applications. It is composed of a single MT-MOS heterojunction structure. This is an entirely new approach to Power MOSFET design. With this design, the gate drive current requirement is reduced by as much as 100x compared to other MOSFETs. This contributes significantly to the low gate voltage noise immunity that the IXTP1N80 has. Furthermore, the extended temperature range ensures reliable performance under high temperature conditions. Lastly, due to the improved power dissipation, the IXTP1N80 delivers industry leading power dissipation.

The working principle of the IXTP1N80 can be described as follows. First, a gate voltage is applied to the IXTP1N80 to form a conductive channel between source and drain. This reduces the on-state resistance, allowing electrons to flow between source and drain. Secondly, the electrons will flow through the MT-MOS heterojunction structure. This structure provides superior conduction capability compared to traditional MOSFETs. Lastly, the low gate drive current requirement reduces the power consumption of the device compared to other MOSFETs.

In conclusion, the IXTP1N80 is a single proprietary logic level FET. It has low gate drive requirement, extended temperature range and improved power dissipation. The working principle involves forming a conductive channel between source and drain and electrons flowing through the MT-MOS heterojunction structure. These features make the IXTP1N80 ideal for applications such as off-line and DC-DC converters, and many other power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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