IXTP88N085T Allicdata Electronics
Allicdata Part #:

IXTP88N085T-ND

Manufacturer Part#:

IXTP88N085T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 85V 88A TO-220
More Detail: N-Channel 85V 88A (Tc) 230W (Tc) Through Hole TO-2...
DataSheet: IXTP88N085T datasheetIXTP88N085T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 85V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTP88N085T transistor is a high-power enhancement mode MOSFET (metal–oxide–silicon field-effect transistor). It is widely used for power control, such as power supply control, power factor correction, and motor control. The IXTP88N085T is a component of an integrated circuit, meaning it is a single, discrete component. It is part of an electrical or electronic equipment that converts energy into a useful form, such as electricity or heat.

The IXTP88N085T has a rated drain-to-source voltage of 80 V, a rated drain current of 8 A, and a power dissipation of 13.9 W. The IXTP88N085T is a uni-polar N-channel FET (field-effect transistor), which has a single internal gate electrode. The gate electrode is connected to a voltage source, which produces a potential relative to the FET\'s source. This potential exerts an electrical field on the bulk of the MOSFET controlled by the gate.

In operation, the IXTP88N085T is turned on or off by applying a gate voltage to the gate electrode. When the gate voltage is applied, the MOSFET turns on, allowing current to flow between the drain and source. When the gate voltage is not applied, the MOSFET turns off, preventing current from flowing between the drain and source.

The IXTP88N085T is used in a wide variety of applications, including power supply control, power factor correction, and motor control. It can be used in linear regulator circuits and switching power supplies, as well as other applications that require switching capability. It is also used in LED (light-emitting diode) driver circuits, where it is used to accurately control the current and hence the brightness of a series of LEDs.

The IXTP88N085T is a versatile component and is suitable for many applications. Thanks to its low on-resistance and fast switching speed, it is ideal for controlling high power loads such as motors, transformers and power supplies. It can also be used to control the output voltage of electronic devices, such as digital-to-analog converters.

The IXTP88N085T is a versatile transistor that can be used in many applications. It is a uni-polar N-channel FET, meaning that it has a single internal gate electrode. When a gate voltage is applied to the gate electrode, the MOSFET turns on, allowing current to flow between the drain and source. In operation, the IXTP88N085T can be used to control high power loads, such as motors and transformers, as well as for accurately controlling the output voltage of electronic devices.

The specific data is subject to PDF, and the above content is for reference

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