IXTP34N65X2

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IXTP34N65X2 Application Field and Working Principle

The IXTP34N65X2 is a low-voltage MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device. The IXTP34N65X2 is ideal for a variety of applications, including power conversion of industrial control, interface, power switching and telecommunications. The IXTP34N65X2 monolithically integrates a 45-A load switch MOSFET and a P-channel logic-level MOSFET to provide efficient, low-voltage control of power. The IXTP34N65X2 is suitable for power applications over a wide voltage range (up to 18V).

DESCRIPTION

The IXTP34N65X2 is constructed of vertical DMOS (Double Diffused Metal Oxide Semiconductor) technology and is a logic-level MOSFET. This vertical DMOS technology enables the IXTP34N65X2 to possess a 40V breakdown voltage and 200mA RDS(on) including the series protection diodes. A built-in protection diode ensures safety, supplies uninterrupted performance and prevents burnout of the IXTP34N65X2 even in incorrect usage situations. The IXTP34N65X2 also has very low gate charge which makes it highly efficient in power conversion.

WORKING PRINCIPLE

The IXTP34N65X2 works on the principle of field-effect transistor (FET). The FET is a three-terminal unipolar semiconductor device with source, gate and drain terminals. FETs are also referred to as voltage-controlled field-effect transistors. The FET has a very high input impedance at the gate electrode and is so arranged that when a voltage difference is applied across the gate and source terminals, an electric field is generated between them. This electric field creates an electric current that passes from the gate to the drain, thus controlling the voltage to the drain.

In the IXTP34N65X2 the source terminal is connected to ground and the drain terminal is connected to the load. When a voltage difference is applied across the gate and source terminals, an electric field is generated between them which will cause the drain current to flow. This creates a voltage across the load and hence, the load is powered. The IXTP34N65X2 also has a built-in protection diode which prevents any damage that may occur due to incorrect usage.

APPLICATION FIELD

The IXTP34N65X2 can be used in a wide variety of power switching applications, including those in industrial control, interface and power conversion. Most industrial applications requiring precise, efficient and low-voltage power routing and conversion can benefit from the IXTP34N65X2. It is also capable of low-voltage drop-off in periods of power surges hence, providing efficient protection from power surges.

The IXTP34N65X2 is also suitable for use in niche power applications as it can produce high efficiency power conversion. It can also operate in harsh environmental conditions up to 18V provided the safety measures are taken care of. This makes it an excellent choice for applications such as medical, transportation and aerospace.

CONCLUSION

The IXTP34N65X2 is a low-voltage MOSFET device that can be used to power a wide range of industrial applications. It can provide precise, efficient and low-voltage power routing and conversion in industrial control, interface and power switching. The IXTP34N65X2 also has a built-in protection diode which prevents any damage that may occur due to incorrect usage. It can also be used for quality power conversion in niche applications, providing high efficiency and environmental protection up to 18V.

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