| Allicdata Part #: | IXTP12N50P-ND |
| Manufacturer Part#: |
IXTP12N50P |
| Price: | $ 1.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 12A TO-220 |
| More Detail: | N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP12N50P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.89000 |
| 10 +: | $ 1.83330 |
| 100 +: | $ 1.79550 |
| 1000 +: | $ 1.75770 |
| 10000 +: | $ 1.70100 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP12N50P is a type of field-effect transistor (FET). FETs are semiconductor devices that use a voltage to control the current flowing through it. In particular, the IXTP12N50P is a power MOSFET, which means it is used to switch high-current, low-voltage devices on and off. It is suitable for use in a wide variety of applications and is a popular choice for many circuits.
The IXTP12N50P is a single, enhancement-type MOSFET. This means that when a voltage is applied to the gate, the channel between the source and drain opens, allowing current from the source to the drain. This FET has a low threshold voltage, which means that it can be triggered easily; it is ideal for switching circuits where noise from EMI needs to be kept to a minimum.
The IXTP12N50P has a low on-resistance, which increases its efficiency by reducing power loss. It also has a drain-to-source dV/dt rating of up to 600V/us, which allows it to switch rapidly and with little distortion. The IXTP12N50P is rated for pulse operation, with a peak pulse current rating of up to 75A.
Due to its low threshold voltage and low on-resistance, the IXTP12N50P is commonly used in many applications, such as power supplies, motor control, audio amplifiers, and telecommunications. In motor control applications, the IXTP12N50P can be used to switch inductive loads efficiently and rapidly. In audio amplifiers, it can be used in switched-mode power supplies to reduce noise from electromagnetic interference (EMI).
The IXTP12N50P is available in a TO-220AB package, which is designed for easy mounting and thermal dissipation. This package also helps to reduce the risk of electrical arcing, which may cause device failure. The IXTP12N50P has an operating temperature range of -55°C to 150°C and a storage temperature range of -55°C to 155°C.
In summary, the IXTP12N50P is a versatile single, enhancement-type MOSFET that is suitable for a wide range of applications. It is a popular choice for power supplies, motor control, audio amplifiers, and telecommunications due to its low threshold voltage, low on-resistance, and high current capability. It also has a robust TO-220AB package and an operating temperature range of -55°C to 150°C.
The specific data is subject to PDF, and the above content is for reference
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