IXTP230N075T2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	178nC @ 10V
Series:	TrenchT2™
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	230A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTP230N075T2 Application Field And Working Principle

The IXTP230N075T2 is a type of metal-oxide semiconductor field-effect transistor (MOSFET) made by Infineon Technologies. The device has a typical drain-source breakdown voltage of 4.5V and a drain-source on-current of 0.75 amperes. The device is available in a 40V 7A surface mount package, making it suitable for a variety of applications. This article will discuss the IXTP230N075T2’s application field and working principle.

The IXTP230N075T2 is primarily used as a switching device in low-power applications, such as motor control, H-bridge circuits, and power converters. In motor control applications, the device can be used to drive inductive loads such as DC motors, solenoids, and relays. Furthermore, due to its low on-resistance, the IXTP230N075T2 can also be used in H-bridge circuits, benefiting from its low resistance path that helps suppress power losses. Additionally, as a power transistor, it can also be used in power converters as it has proven to be capable of delivering efficient power conversion and fast switching speeds.

The IXTP230N075T2 has a working principle similar to other MOSFETs. It is a voltage-controlled device, meaning the gate voltage is used to control the device’s drain-to-source resistance, or on-resistance. When the gate voltage is applied, electrons are drawn to the gate, while holes are attracted to the source. This forms an inversion layer, increasing the device’s conductivity between the source and drain. The lower the gate voltage, the less current will flow between the two terminals, making it ideal for controlling current in circuits.

In addition, the IXTP230N075T2 has a high-power rating, which allows it to handle high voltages and currents, making it suitable for applications that require high switching frequencies, such as inverters and motor control. Furthermore, the device also has a low on-resistance, enabling it to handle high power without significant losses.

The IXTP230N075T2 also has several protective features that help ensure the device’s longevity and reliability. It has a power SOA (safe operating area) protection, meaning that the device will turn off in the event of over-current or over-voltage conditions. Furthermore, it has a thermal shutdown feature that will automatically turn off the device in the event of excessive heat, protecting it from damage.

Overall, the IXTP230N075T2 is a versatile MOSFET device that can be used for a variety of switching applications. Its low on-resistance and high-power rating make it suitable for high-power applications, while its rugged construction and built-in protective features help ensure its reliability over time.

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