| Allicdata Part #: | IXTP120P065T-ND |
| Manufacturer Part#: |
IXTP120P065T |
| Price: | $ 3.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 65V 120A TO-220 |
| More Detail: | P-Channel 65V 120A (Tc) 298W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP120P065T Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.77124 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 298W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13200pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 65V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP120P065T is a third-generation MOSFET (metal oxide semiconductor field effect transistor) that is frequently used in a wide range of applications. This versatile device can be used in a variety of roles, including power control, protection, switching, and pulse applications. It is a single power MOSFET that can operate with a variety of voltages and frequencies.
The IXTP120P065T is a highly efficient device with a low on-resistance and a high saturation voltage. This combination allows it to provide reliable operation and a low power loss. It is also designed with a high reliability and performance as well as robustness for long-term use. As a result, it is ideal for use in a variety of industries, including automotive, industrial, control, and consumer electronics.
The IXTP120P065T has an advanced symmetrical layout and an associated gate drive circuit. This provides an enhanced drive capability and reduces switching loss. The device also includes a wide range of safety features, such as overcurrent and short circuit protection. This makes it especially suitable for use in sensitive applications.
To understand the working principle of the IXTP120P065T, it is important to first understand MOSFETs in general. MOSFETs are transistors that control the flow of current between a control electrode, or gate, and two other terminals, called the source and the drain. By applying an electric voltage to the gate, a variable resistance can be created between the source and drain, allowing current to flow through the device. When the gate voltage is increased, the resistance between the source and drain decreases, increasing the current flow.
The IXTP120P065T is a symmetrical MOSFET, meaning that the gate and source terminals have the same input/output impedance. This allows for a much more efficient operation, as well as a higher input threshold voltage. This device also has a lower gate capacitance, meaning that its on/off times are faster.
The IXTP120P065T is a highly reliable and efficient power MOSFET. It is suitable for a variety of applications, including power control, protection, switching, and pulse applications. Its robust design and excellent features make it an ideal choice for a variety of industries, including automotive, industrial, control, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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