| Allicdata Part #: | IXTP06N120P-ND |
| Manufacturer Part#: |
IXTP06N120P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 600MA TO-220 |
| More Detail: | N-Channel 1200V 600mA (Tc) 42W (Tc) Through Hole T... |
| DataSheet: |  IXTP06N120P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.3nC @ 10V |
| Series: | PolarVHV™ |
| Rds On (Max) @ Id, Vgs: | 32 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 600mA (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP06N120P is a type of N-Channel PowerTrench MOSFET (metal–oxide–semiconductor field-effect transistor). It is widely used in fields such as computer engineering, telecommunications, and a variety of other industrial and design applications. This device can help reduce power losses, increase overall efficiency, and provide superior switching performance.
The IXTP06N120P offers high speed switching and low on-resistance due to its advanced PowerTrench process technology. It is manufactured using a reliable 3-dimensional power process design for unmatched performance and reliability. The IXTP06N120P features N-Channel enhancement mode MOSFET technology, with low on-resistance and high gate-source voltage. The IXTP06N120P has a maximum drain-source voltage of 600V with a gate-source capacitance of 78pF.
The IXTP06N120P works through an application of the MOS capacitor principle. When the gate-source voltage is increased, the electrons accumulate in the gate insulator, forming an electric field at the oxide–semiconductor interface. This forms a conductive layer between the source and drain, creating an inversion layer and allowing current to flow from the source to the drain, thus providing electrical control over the power transduction.
The IXTP06N120P offers many advantages such as its low on-resistance and superior switching performance. It also has a relatively high gate capacitance due to its N-Channel enhancement mode MOSFET technology, which helps reduce the switching speed since the drain-source voltage must rise to be able to decrease the Gate-Source voltage.
The IXTP06N120P is suitable for a variety of different applications. It can be used in computer engineering and telecommunications to reduce power losses, improve overall efficiency and provide superior switching performance. The IXTP06N120P can also be used in industrial and design applications as well. It provides superior switching performance and helps reduce overall power losses.
The IXTP06N120P is a reliable and efficient N-Channel PowerTrench MOSFET featuring low on-resistance and high gate-source voltage. It offers superior switching performance, high speed switching and low on-resistance due to its advanced PowerTrench process technology. The IXTP06N120P is suitable for a variety of different applications, from computer engineering and telecommunications to industrial and design applications.
The specific data is subject to PDF, and the above content is for reference
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