Allicdata Part #: | IXTP140N055T2-ND |
Manufacturer Part#: |
IXTP140N055T2 |
Price: | $ 2.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 140A TO-220 |
More Detail: | N-Channel 55V 140A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | IXTP140N055T2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.33113 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4760pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP140N055T2 is a high-performance N-channel enhancement mode field-effect transistor (FET). It is extensively used as a switch or amplifier in many engineering applications. The IXTP140N055T2 offers an excellent combination of switching speed and low gate charge, making this transistor an ideal choice for high-speed switching applications. This article will discuss the application field and working principle of the IXTP140N055T2.
Application Field of IXTP140N055T2
The IXTP140N055T2 is especially designed for use in high-speed switching applications. It can be used in a variety of circuit configurations such as voltage regulation, high-voltage protection circuits, and low-noise amplifier designs. It is suitable for switching in variable frequency motor control circuits, and can also be used as a load switch or in power supplies. This device also finds use in multi-channeled power supplies, pulse-width modulation (PWM) motor control, and low-power switching circuits. It can also be used in high frequency Ac-DC converters, HR trigger circuits, and high frequency DC-DC converters.
Working Principle of IXTP140N055T2
The IXTP140N055T2 is a high-performance N-channel enhancement mode field-effect transistor (FET). It works on the principles of a current source. When a voltage is applied to the gate of the transistor, it creates a depletion region around the channel, allowing current to flow between the source and the drain. In this mode, the device functions as a switch, allowing current to flow when operating in ON state. When the switch is OFF, the device will not allow any current to flow. The IXTP140N055T2 features an on-state resistance (RDS(on)) of 55mΩ and a gate charge (Qg) of 49nC.
The device has a max drain-source voltage of 140V and a max drain current of 42.5A. Its maximum operating temperature ranges from –55°C to +150°C. The device also has an excellent ratio of drain-source on-state resistance and gate charge, making it an excellent choice for high-speed switching applications. The IXTP140N055T2 also has an extremely low intrinsic capacitance, further increasing the speed of the switch. The device offers an excellent combination of low gate capacitance, quick switching speed and low on-state resistance.
Conclusion
The IXTP140N055T2 is a high-performance N-channel enhancement mode field-effect transistor (FET) that is extensively used as a switch or amplifier in many engineering applications. It features an excellent combination of low gate capacitance, quick switching speed and low on-state resistance, which makes it an ideal choice for high-speed switching applications. This article has discussed the application field and working principle of the IXTP140N055T2.
The specific data is subject to PDF, and the above content is for reference
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