Allicdata Part #: | IXTP1N120P-ND |
Manufacturer Part#: |
IXTP1N120P |
Price: | $ 2.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 1A TO-220 |
More Detail: | N-Channel 1200V 1A (Tc) 63W (Tc) Through Hole TO-2... |
DataSheet: | IXTP1N120P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.95615 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.6nC @ 10V |
Series: | PolarVHV™ |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXTP1N120P is a silicon controlled switching device, commonly known as an SCR. It is a three terminal device, commonly classified as an FET or metal-oxide-semiconductor field effect transistor, often abbreviated as MOSFET. Generally, the IXTP1N120P device is used for applications such as switching, protection, speed control and power conversion.
The IXTP1N120P is a type of single MOSFET, which means it is composed of just one MOSFET (metal-oxide-semiconductor field effect transistor). This single MOSFET is controlled by an electrical signal, which is generated by a voltage difference or current flow. This signal is then sent to the gate terminal of the IXTP1N120P, which then allows current to flow between the source and drain terminals.
When using the IXTP1N120P device for applications such as switching, protection, speed control and power conversion, it helps control the flow of electrons through the circuit. This device is designed in such a way that it will be able to function even with a large voltage drop across it, making it suitable for applications that require a high amount of power. In addition, this device is able to operate at low power levels, making it suitable for applications that require low power.
The principle of operation of the IXTP1N120P device is based on two properties: capacitance and charge. When an voltage or current is applied to the gate terminal, the device creates a voltage difference between the source and drain terminals. This voltage difference creates an electric field, which acts as an insulator to prevent electrons from moving across the channel between the source and drain terminals. This electric field is known as the OFF-state of the device. Once the voltage or current difference at the gate terminal surpasses a certain threshold, the electric field will be dissipated, and the channel will allow electrons to flow, creating an ON-state.
The IXTP1N120P is also designed to be highly efficient when in use. This efficiency is achieved through a number of factors, such as very low leakage current, low thermal resistance and low on-resistance. This makes the IXTP1N120P suitable for applications where minimum power consumption is required. This efficiency also creates minimal waste heat, which can help to reduce the heat-related problems that can be encountered in certain applications.
The IXTP1N120P device is an excellent choice for use in applications such as switching, protection, speed control and power conversion. By combining features such as highly efficient operation, low leakage current, low thermal resistance and low on-resistance, it is also well suited for applications that require a high degree of performance and reliability. With its ability to be operated at both high and low power levels, the IXTP1N120P is a versatile device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXTP102N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 102A TO-... |
IXTP90N075T2 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 90A TO-22... |
IXTP32P05T | IXYS | 1.48 $ | 846 | MOSFET P-CH 50V 32A TO-22... |
IXTP130N10T | IXYS | -- | 1138 | MOSFET N-CH 100V 130A TO-... |
IXTP3N120 | IXYS | -- | 65 | MOSFET N-CH 1.2KV 3A TO-2... |
IXTP44N10T | IXYS | -- | 338 | MOSFET N-CH 100V 44A TO-2... |
IXTP24P085T | IXYS | -- | 169 | MOSFET P-CH 85V 24A TO-22... |
IXTP100N04T2 | IXYS | -- | 131 | MOSFET N-CH 40V 100A TO-2... |
IXTP70N075T2 | IXYS | 1.48 $ | 84 | MOSFET N-CH 75V 70A TO-22... |
IXTP60N10T | IXYS | -- | 1000 | MOSFET N-CH 100V 60A TO-2... |
IXTP1R6N50D2 | IXYS | -- | 185 | MOSFET N-CH 500V 1.6A TO2... |
IXTP28P065T | IXYS | 2.23 $ | 55 | MOSFET P-CH 65V 28A TO-22... |
IXTP48N20T | IXYS | 2.25 $ | 100 | MOSFET N-CH 200V 48A TO-2... |
IXTP3N50D2 | IXYS | 2.32 $ | 87 | MOSFET N-CH 500V 3A TO220... |
IXTP3N100D2 | IXYS | 2.32 $ | 82 | MOSFET N-CH 1000V 3A TO22... |
IXTP200N055T2 | IXYS | -- | 101 | MOSFET N-CH 55V 200A TO-2... |
IXTP1N100 | IXYS | 3.28 $ | 43 | MOSFET N-CH 1000V 1.5A TO... |
IXTP52P10P | IXYS | 4.02 $ | 75 | MOSFET P-CH 100V 52A TO-2... |
IXTP6N100D2 | IXYS | 4.77 $ | 54 | MOSFET N-CH 1000V 6A TO22... |
IXTP15N50L2 | IXYS | 5.45 $ | 66 | MOSFET N-CH 500V 15A TO-2... |
IXTP16N50P | IXYS | -- | 65 | MOSFET N-CH 500V 16A TO-2... |
IXTP1R6N50P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A TO-... |
IXTP1R4N60P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 1.4A TO-... |
IXTP152N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTP160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTP160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-2... |
IXTP180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-2... |
IXTP180N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTP182N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTP200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTP200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTP220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTP220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTP240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
IXTP50N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 50A TO-22... |
IXTP55N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 55A TO-22... |
IXTP64N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 64A TO-22... |
IXTP70N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 70A TO-22... |
IXTP76N075T | IXYS | -- | 1000 | MOSFET N-CH 75V 76A TO-22... |
IXTP88N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 88A TO-22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...