IXTP200N055T2

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The IXTP200N055T2 is a power MOSFET with a nominal breakdown voltage of 55 volts. This device is designed for use in power management applications, such as DC-DC converters and power supply systems. The IXTP200N055T2 is packaged in a TO-263 (D-Pak) package with a maximum on-state drain current of 200 A. The device is RoHS compliant and lead (Pb)-free, making it suitable for use in lead-free manufacturing processes.

The IXTP200N055T2 is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor that utilizes metal-oxide-semiconductor technology to keep electronic components in a nonconductive state until the necessary voltage is applied. This type of transistor offers a high input impedance, low power dissipation, high switching speed, and low on-state resistance. These attributes make the IXTP200N055T2 ideal for use in high-efficiency power management circuits, such as DC-DC converters and power supply systems.

The IXTP200N055T2 is a voltage-controlled device, meaning its output current is determined by the voltage applied to its gate terminal. When a positive voltage is applied to the gate terminal, electrons from the N-type material below the gate fill the narrow channel between the source and drain contacts. This process creates a conductive path between the source and drain, allowing current to flow. When the gate voltage is removed, the electrons are removed from the channel, creating an insulating region and disconnecting the source and drain contacts.

The main application area of the IXTP200N055T2 is in DC-DC converters, where it is used to control the flow of current from an output voltage to an input voltage. The device provides high switching efficiency and low on-state resistance, enabling it to generate high load currents with minimal losses. In power supply systems, the IXTP200N055T2 is used to switch ac power to the various electronic components within the system. This device provides the necessary isolation between sections of the power supply while also maintaining a very high level of efficiency.

The IXTP200N055T2 is a high-speed power MOSFET with a very low on-state resistance and a maximum breakdown voltage of 55 volts. This device is suitable for use in a variety of applications, including DC-DC converters and power supply systems. It utilizes a voltage-controlled operation to allow electrons to flow between the source and drain contacts when a positive voltage is applied to the gate terminal. The device is RoHS compliant and lead (Pb)-free, making it suitable for use in lead-free manufacturing processes.

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