Allicdata Part #: | IXTP20N65XM-ND |
Manufacturer Part#: |
IXTP20N65XM |
Price: | $ 4.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 9A TO-220 |
More Detail: | N-Channel 650V 9A (Tc) 63W (Tc) Through Hole TO-22... |
DataSheet: | IXTP20N65XM Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 4.01008 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP20N65XM is a Insulated Gate Bipolar Transistor (IGBT) made by Infineon Technologies. It is one of the most widely used power transistors and is used for a variety of applications. This article aims to discuss the application fields and working principles of the IXTP20N65XM.
The IXTP20N65XM is a N-channel IGBT, which is a type of transistor that combines the properties of both bipolar transistors and field-effect transistors (FETs). The IXTP20N65XM uses an insulated gate and a base terminal to control the flow of current between the collector and emitter. This makes it a versatile component with a variety of applications. The IXTP20N65XM can be used as a high-speed switching device, in high-speed motor controllers, in class-D power amplifiers, in flyback converters, and in high-voltage DC-DC converters.
One of the key features of the IXTP20N65XM is its high-frequency switching capability. The transistor can switch at frequencies of up to 130kHz, which makes it a suitable choice for high-speed applications such as high-frequency switching power supplies and motor control applications. The transistor also has a low on-resistance, which makes it ideal for low-power applications. In addition, the IXTP20N65XM has a high-temperature operation, which makes it suitable for use in high-temperature environments.
The IXTP20N65XM’s working principle is based on the concept of a voltage-controlled current source. When a voltage is applied to the gate of the transistor, a current flows through the transistor and is regulated by the gate-current. The amount of current that flows through the transistor is determined by the amount of voltage applied to the gate. The IXTP20N65XM is essentially a voltage-controlled switch, so it is capable of quickly turning on and off as needed. It is important to understand the IXTP20N65XM’s working principle in order to make use of its features and capabilities.
To summarize, the IXTP20N65XM is a widely-used N-channel IGBT. It is well-suited for a variety of applications, such as high-speed switching, motor control, and high-power applications. The IXTP20N65XM has a high frequency switching capability and low on-resistance, which makes it ideal for these applications. The IXTP20N65XM’s working principle is based on the concept of a voltage-controlled current source, which allows the transistor to quickly turn on and off as needed.
The specific data is subject to PDF, and the above content is for reference
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