IXTP20N65XM Allicdata Electronics
Allicdata Part #:

IXTP20N65XM-ND

Manufacturer Part#:

IXTP20N65XM

Price: $ 4.46
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 650V 9A TO-220
More Detail: N-Channel 650V 9A (Tc) 63W (Tc) Through Hole TO-22...
DataSheet: IXTP20N65XM datasheetIXTP20N65XM Datasheet/PDF
Quantity: 1000
50 +: $ 4.01008
Stock 1000Can Ship Immediately
$ 4.46
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP20N65XM is a Insulated Gate Bipolar Transistor (IGBT) made by Infineon Technologies. It is one of the most widely used power transistors and is used for a variety of applications. This article aims to discuss the application fields and working principles of the IXTP20N65XM.

The IXTP20N65XM is a N-channel IGBT, which is a type of transistor that combines the properties of both bipolar transistors and field-effect transistors (FETs). The IXTP20N65XM uses an insulated gate and a base terminal to control the flow of current between the collector and emitter. This makes it a versatile component with a variety of applications. The IXTP20N65XM can be used as a high-speed switching device, in high-speed motor controllers, in class-D power amplifiers, in flyback converters, and in high-voltage DC-DC converters.

One of the key features of the IXTP20N65XM is its high-frequency switching capability. The transistor can switch at frequencies of up to 130kHz, which makes it a suitable choice for high-speed applications such as high-frequency switching power supplies and motor control applications. The transistor also has a low on-resistance, which makes it ideal for low-power applications. In addition, the IXTP20N65XM has a high-temperature operation, which makes it suitable for use in high-temperature environments.

The IXTP20N65XM’s working principle is based on the concept of a voltage-controlled current source. When a voltage is applied to the gate of the transistor, a current flows through the transistor and is regulated by the gate-current. The amount of current that flows through the transistor is determined by the amount of voltage applied to the gate. The IXTP20N65XM is essentially a voltage-controlled switch, so it is capable of quickly turning on and off as needed. It is important to understand the IXTP20N65XM’s working principle in order to make use of its features and capabilities.

To summarize, the IXTP20N65XM is a widely-used N-channel IGBT. It is well-suited for a variety of applications, such as high-speed switching, motor control, and high-power applications. The IXTP20N65XM has a high frequency switching capability and low on-resistance, which makes it ideal for these applications. The IXTP20N65XM’s working principle is based on the concept of a voltage-controlled current source, which allows the transistor to quickly turn on and off as needed.

The specific data is subject to PDF, and the above content is for reference

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