| Allicdata Part #: | IXTP32N65XM-ND |
| Manufacturer Part#: |
IXTP32N65XM |
| Price: | $ 3.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 650V 14A TO-220 |
| More Detail: | N-Channel 650V 14A (Tc) 78W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP32N65XM Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 3.03206 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 78W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2206pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 135 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP32N65XM transistor is a type of insulated-gate bipolar transistor (IGBT) which integrates an N-channel vertical power MOSFET with a bipolar p-n-p transistor in a single package. It exhibits characteristics of both switches, making it suitable for various power switching applications. The IXTP32N65XM is the “industry standard” IGBT due to its innovative design and reliability, and is commonly used in industries such as automotive, industrial and consumer. This article will discuss the application field and working principle of the IXTP32N65XM.
Application Field
Due to its excellent characteristics, the IXTP32N65XM is suitable for a wide range of applications, including motor control, UPS, solar inverters and more. In motor control applications, the IXTP32N65XM can achieve fast and smooth switching of currents, thus allowing for precise control of motor speed and position. In addition, it is ideal for AC/DC, front-end modules, as well as high-frequency and fast switching applications. With a maximum collector-to-emitter voltage of 660V, the IXTP32N65XM is specially designed for high voltage applications, such as automotive systems, solar inverters and other power electronic systems.
Working Principle
The working principle of the IXTP32N65XM is based on two main elements - the N-channel vertical power MOSFET and the bipolar p-n-p transistor. The N-channel MOSFET acts as a voltage-controlled switch, and is responsible for switching current between the collector and emitter. The p-n-p transistor is responsible for providing the required current gain, thus enabling greater current transfer between the collector and emitter. The IXTP32N65XM is operated by applying a voltage to the gate of the MOSFET, which then switches on and off the current flow from the collector to the emitter. In addition, the device is designed to have a low gate voltage drive current, reducing the power dissipation and consequently improving the device efficiency.
Overall, the IXTP32N65XM is an innovative yet reliable insulated-gate bipolar transistor, suitable for various power switching applications. Its excellent characteristics, such as its fast switching time, low gate voltage drive current, and maximum collector-to-emitter voltage of 660V make it ideal for applications such as motor control, UPS and solar inverters. As a result, the IXTP32N65XM has become the “industry standard” and is commonly used in various industries.
The specific data is subject to PDF, and the above content is for reference
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