| Allicdata Part #: | IXTP50N25T-ND |
| Manufacturer Part#: |
IXTP50N25T |
| Price: | $ 2.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 250V 50A TO-220 |
| More Detail: | N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP50N25T Datasheet/PDF |
| Quantity: | 226 |
| 1 +: | $ 2.97000 |
| 10 +: | $ 2.88090 |
| 100 +: | $ 2.82150 |
| 1000 +: | $ 2.76210 |
| 10000 +: | $ 2.67300 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP50N25T Application Field and Working Principle
IXTP50N25T is a type of FET, or field-effect transistor. It is a power MOSFET, which acts as a switch, providing extremely fast switching speeds and low on-state resistance with minimal heat dissipation. These features make the IXTP50N25T the perfect component for high-efficiency, low-heat-dissipation applications.
How it works
FETs are unipolar electronic devices that control the flow of electrical current. The IXTP50N25T power MOSFET has an extremely low on-state resistance and a high breakdown voltage, making it an excellent choice for high-power applications. It has both an N-channel and a P-channel, which can be used in both low-side and high-side switching applications. It also has a maximum temperature of 175°C.
The device itself has three terminals, source, drain and gate. The source and drain terminals act as the power input and output, respectively, and the gate is used to control the flow of current through the device. Whenever the voltage on the gate is higher than the voltage on the source, the device is turned “on” and the current will flow through the device. When the voltage on the gate is lower than the source, the device is turned “off” and the current stops flowing.
Applications
The IXTP50N25T power MOSFET can be used in high temperature, low voltage applications, such as computer motherboards, DC-to-DC converters, and motor control systems. It can also be used in consumer electronics, such as cell phones, laptops, and tablets. Because of its low on-state resistance and high breakdown voltage, it is ideal for high-power applications such as motor control and power supplies, where high efficiency and minimal heat dissipation are desired.
In addition, the IXTP50N25T can be used in high-temperature, high-power applications, such as in automotive applications, which require high-efficiency, low-heat-dissipation components. It can also be used in high-power AC-to-DC converters, as well as in high-performance communications systems.
Conclusion
The IXTP50N25T is an excellent choice for high-efficiency, low-heat-dissipation applications. It is an N- and P-channel power MOSFET with a low on-state resistance and a high breakdown voltage, making it suitable for high-power applications. It is also capable of withstanding high temperatures, making it ideal for automotive and electronics applications. With its features, the IXTP50N25T makes an excellent choice for any high-power application requiring high efficiency and minimal heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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